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1. KR1020190126913 - 반도체 장치

官庁
大韓民国
出願番号 1020197031079
出願日 28.04.2017
公開番号 1020190126913
公開日 12.11.2019
特許番号 102202173
特許付与日 12.01.2021
公報種別 B1
IPC
H01L 29/778
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66半導体装置の型
68整流,増幅またはスイッチされる電流を流さない電極に電流のみまたは電位のみを与えることにより制御できるもの
76ユニポーラ装置
772電界効果トランジスタ
778二次元電荷担体ガスチャンネルをもつもの,例.HEMT
H01L 21/02
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
H01L 29/66
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66半導体装置の型
H01L 29/812
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66半導体装置の型
68整流,増幅またはスイッチされる電流を流さない電極に電流のみまたは電位のみを与えることにより制御できるもの
76ユニポーラ装置
772電界効果トランジスタ
80PN接合ゲートまたは他の整流接合ゲートによって生じる電界効果を有するもの
812ショットキーゲートを有するもの
CPC
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/02579
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
02579P-type
H01L 29/66462
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66446with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
66462with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
出願人 미쓰비시덴키 가부시키가이샤
発明者 기타노 도시아키
代理人 제일특허법인(유)
発明の名称
(KO) 반도체 장치
要約
(KO)
Si 기판(1)의 위에 질화물 반도체층(2, 3, 4)이 마련되어 있다. 질화물 반도체층(2, 3, 4)의 위에 게이트 전극(5), 소스 전극(6) 및 드레인 전극(7)이 마련되어 있다. 드레인 전극(7)의 아래에 있어서 Si 기판(1)에, 질화물 반도체층(2, 3, 4)과 접하는 P형 도전층(11)이 마련되어 있다.