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1. KR1020100098601 - 반도체 가공용 양면 점착 테이프 및 반도체 가공용 테이프

官庁 大韓民国
出願番号 1020107010414
出願日 28.11.2008
公開番号 1020100098601
公開日 08.09.2010
特許番号 1013863670000
特許付与日 16.04.2014
公報種別 B1
IPC
H01L 21/304
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
H01L 21/683
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
C09J 7/02
C化学;冶金
09染料;ペイント;つや出し剤;天然樹脂;接着剤;他に分類されない組成物;他に分類されない材料の応用
J接着剤;接着方法一般の非機械的観点;他に分類されない接着方法;物質の接着剤としての使用
7フィルム状または箔状の接着剤
02担体上のもの
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/3043
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
3043Making grooves, e.g. cutting
C09J 7/38
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
7Adhesives in the form of films or foils
30characterised by the adhesive composition
38Pressure-sensitive adhesives [PSA]
C09J 7/22
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
22Plastics; Metallised plastics
H01L 21/67132
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67132Apparatus for placing on an insulating substrate, e.g. tape
C09J 2203/326
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2203Applications of adhesives in processes or use of adhesives in the form of films or foils
326for bonding electronic components such as wafers, chips or semiconductors
出願人 세키스이가가쿠 고교가부시키가이샤
発明者 이 양수
스기타 다이헤이
스미이 유이치
오야마 야스히코
代理人 특허법인코리아나
優先権情報 JP-P-2007-320587 12.12.2007 JP
2008088236 28.03.2008 JP
発明の名称
(KO) 반도체 가공용 양면 점착 테이프 및 반도체 가공용 테이프
要約
(KO)
본 발명은, IC 칩의 제조시에 반도체용 웨이퍼와 지지판을 접착하여 반도체용 웨이퍼를 보강하기 위해서 사용되는 반도체 가공용 양면 점착 테이프로서, 자극을 줌으로써 용이하고 확실하게 반도체 가공용 양면 점착 테이프와 지지판 사이에서 박리될 수 있는 것인 반도체 가공용 양면 점착 테이프를 제공하는 것을 목적으로 한다. 본 발명은, IC 칩의 제조시에 반도체용 웨이퍼와 지지판을 접착하여 반도체용 웨이퍼를 보강하기 위해서 사용되는 반도체 가공용 양면 점착 테이프로서, 기재와 상기 기재의 양면에 형성된 점착제층으로 이루어지고, 지지판과 접착하는 측의 점착제층이, 자극에 의해 기체를 발생시키는 기체 발생제를 함유하는 것이며, 또한 그 지지판과 접착하는 측의 점착제층에 접하는 측의 상기 기재에 도트 형상의 이형 처리가 실시되어 있고, 이형 처리를 실시한 도트의 직경을 x, 1 ㎠ 당 도트의 개수를 y 로 했을 때에, x 와 y 가 도 4 의 파선 A, 파선 B 및 파선 C 로 둘러싸인 범위 내인 반도체 가공용 양면 점착 테이프이다.