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出願の表示

1. KR1020100071089 - INDIUM OXIDE TARGET

官庁
大韓民国
出願番号 1020107009347
出願日 03.10.2008
公開番号 1020100071089
公開日 28.06.2010
公報種別 A
IPC
C23C 14/34
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
C23C 14/08
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
06被覆材料に特徴のあるもの
08酸化物
H01B 13/00
H電気
01基本的電気素子
Bケーブル;導体;絶縁体;導電性,絶縁性または誘導性特性に対する材料の選択
13導体またはケーブルの製造に特に適合した装置または方法
H01B 5/14
H電気
01基本的電気素子
Bケーブル;導体;絶縁体;導電性,絶縁性または誘導性特性に対する材料の選択
5形を特徴とする非絶縁導体または導電物体
14絶縁支持体上に導電層または導電フイルムを有するもの
CPC
C23C 14/086
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
086of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 14/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C04B 35/01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
01based on oxide ceramics
C04B 2235/3293
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
出願人 MITSUI MINING & SMELTING CO., LTD.
미츠이 긴조쿠 고교 가부시키가이샤
発明者 TAKAHASHI SEIICHIRO
타카하시, 세이이치로
MIYASHITA NORIHIKO
미야시타, 노리히코
代理人 박종혁
김정욱
정삼영
송봉식
優先権情報 JP-P-2007-260436 03.10.2007 JP
発明の名称
(EN) INDIUM OXIDE TARGET
(KO) 산화인듐계 타깃
要約
(EN) Disclosed is an indium oxide target comprising an oxide sintered body containing indium oxide, and tin if necessary, while containing not less than 0.0001 mole but less than 0.10 mole of an additional element (excluding Ba, Mg and Y), which has an oxygen binding energy of 100-350 kJ/mol, per 1 mole of indium. COPYRIGHT KIPO WIPO 2010
(KO) 산화인듐과 필요에 따라 주석을 함유함과 아울러 산소결합 에너지가 100∼350kJ/mol의 범위에 있는 첨가 원소(단, Ba, Mg, Y를 제외함)를 인듐 1몰에 대하여 0.0001몰 이상 0.10몰 미만 함유하는 산화물 소결체를 구비한다.