処理中

しばらくお待ちください...

設定

設定

出願の表示

1. KR1020100063800 - PLASMA FILM FORMING APPARATUS

官庁
大韓民国
出願番号 1020107008360
出願日 14.10.2008
公開番号 1020100063800
公開日 11.06.2010
特許番号 1012174090000
特許付与日 02.01.2013
公報種別 B1
IPC
C23C 16/458
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
16ガス状化合物の分解による化学的被覆であって,表面材料の反応生成物を被覆層中に残さないもの,すなわち化学蒸着(CVD)法
44被覆の方法に特徴のあるもの
458反応室の基板を支えるのに使われる方法に特徴があるもの
H01L 21/31
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
31半導体本体上への絶縁層の形成,例.マスキング用またはフォトリソグラフィック技術の使用によるもの;これらの層の後処理;これらの層のための材料の選択
H01L 21/683
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
CPC
C23C 16/4585
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
C23C 16/50
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
H01L 21/68735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68735characterised by edge profile or support profile
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
出願人 MITSUBISHI HEAVY INDUSTRIES, LTD.
미츠비시 쥬고교 가부시키가이샤
発明者 KAFUKU HIDETAKA
가후쿠 히데타카
SHIMAZU TADASHI
시마즈 다다시
MATSUDA RYUICHI
마츠다 류이치
MATSUKURA AKIHIKO
마츠쿠라 아키히코
NISHIKAWA SEIJI
니시카와 세이지
代理人 특허법인코리아나
優先権情報 2007272233 19.10.2007 JP
発明の名称
(EN) PLASMA FILM FORMING APPARATUS
(KO) 플라즈마 성막 장치
要約
(EN) Provided is a plasma film forming apparatus which can reduce particles even in the case of forming a film by applying bias power to a substrate. In the plasma film forming apparatus, bias power is applied to a wafer (5) placed on a supporting table (4) in a chamber and a thin film is formed on the wafer (5) by using plasma. The supporting table (4) is provided with a columnar supporting table main body (4b) whose outer diameter (C) of a contact surface (4a) with the wafer (5) is smaller than the outer diameter (W) of the wafer (5). The supporting table (4) is also provided with a flange section (4c) which extends in the outer circumference direction from a side surface (4d) of the supporting table main body (4b). A prescribed gap (G1) is formed between the flange (4c) and the rear surface of the outer circumference of the wafer (5). COPYRIGHT KIPO WIPO 2010
(KO) 기판에 바이어스 전력을 인가함으로써 성막하는 경우에도 파티클을 저감할 수 있는 플라즈마 성막 장치가 제공된다. 이 플라즈마 성막 장치에서는, 챔버 내의 지지대 (4) 상에 배치되는 웨이퍼 (5) 에 바이어스 전력이 인가되고, 웨이퍼 (5) 상에 플라즈마를 이용함으로써 박막이 형성된다. 지지대 (4) 에는 웨이퍼 (5) 와의 접촉면 (4a) 의 외경 (C) 이 웨이퍼 (5) 의 외경 (W) 보다 작은 원주상 지지대 본체 (4b) 가 제공된다. 지지대 (4) 에는 또한 지지대 본체 (4b) 의 측면 (4d) 으로부터 외주 방향으로 연장하는 플랜지부 (4c) 가 제공된다. 플랜지부 (4c) 와 웨이퍼 (5) 외주의 이면 사이에는 소정의 간극 (G1) 이 형성된다.