H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
29 | Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor |
66 | Types of semiconductor device ; ; Multistep manufacturing processes therefor |
68 | controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched |
76 | Unipolar devices ; , e.g. field effect transistors |
772 | Field effect transistors |
778 | with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface |
7782 | with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET |
7783 | using III-V semiconductor material |