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1. JP2016058408 - 光起電力装置

官庁
日本
出願番号 2013017473
出願日 31.01.2013
公開番号 2016058408
公開日 21.04.2016
公報種別 A
IPC
H01L 31/04
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
H01L 31/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
0504specially adapted for series or parallel connection of solar cells in a module
0516specially adapted for interconnection of back-contact solar cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
出願人 PANASONIC CORP
パナソニック株式会社
発明者 SHINOHARA WATARU
篠原 亘
代理人 森下 賢樹
宗田 悟志
発明の名称
(EN) PHOTOVOLTAIC DEVICE
(JA) 光起電力装置
要約
(EN)

PROBLEM TO BE SOLVED: To provide a photovoltaic device enhanced in reliability.

SOLUTION: A photovoltaic device 100 has a second conduction type layer 26, a base layer 12 provided on the second conduction type layer 26, a first metal electrode 20 provided on the base layer 12, a through-hole 36 penetrating through the first metal electrode 20 and the base layer 12, an insulation layer 22 which is provided on substantially the whole surface of the first metal electrode 20 and covers the inner wall of the through-hole 36, and a second metal electrode 30 provided on the insulation layer 22. The second metal electrode 30 contacts the second conduction type layer 26 through the through-hole 36 covered with the insulation layer 22.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2016,JPO&INPIT

(JA)

【課題】信頼性を高めた光起電力装置を提供する。
【解決手段】光起電力装置100は、第2導電型層26と、第2導電型層26の上に設けられるベース層12と、ベース層12の上に設けられる第1金属電極20と、第1金属電極20およびベース層12を貫通する貫通孔36と、第1金属電極20の略全面を覆うように設けられ、貫通孔36の内壁を被覆する絶縁層22と、絶縁層22の上に設けられる第2金属電極30と、を備える。第2金属電極30は、絶縁層22により被覆された貫通孔36を介して第2導電型層26と接する。
【選択図】図1

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