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1. (IN8567/DELNP/2012) HIGH-PURITY COPPER ANODE FOR COPPER ELECTROPLATING, METHOD FOR PRODUCING SAME, AND COPPER ELECTROPLATING METHOD

官庁 : インド
出願番号: 8567/DELNP/2012 出願日: 01.10.2012
公開番号: 8567/DELNP/2012 公開日: 30.05.2014
公報種別: A
(国内移行後) 元 PCT 国際出願 出願番号:PCTJP2011057450 ; 公開番号: クリックしてデータを表示
IPC:
C22C /
C 化学;冶金
22
冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C
合金
出願人: MITSUBISHI MATERIALS CORPORATION
発明者: NAKAYA  Kiyotaka
KITA  Koichi
KUMAGAI  Satoshi
KATO  Naoki
WATANABE  Mami
優先権情報: 2010-077215 30.03.2010 JP
発明の名称: (EN) HIGH-PURITY COPPER ANODE FOR COPPER ELECTROPLATING, METHOD FOR PRODUCING SAME, AND COPPER ELECTROPLATING METHOD
要約:
(EN) DISCLOSED ARE A HIGH-PURITY COPPER ANODE FOR ELECTROPLATING THAT CAN REDUCE THE GENERATION OF SLIME AND OTHER PARTICLES AND PLATING FAILURE CAUSED THEREBY, A METHOD FOR PRODUCING THE SAME, AND A COPPER ELECTROPLATING METHOD USING THE SAME. AFTER IMPARTING PROCESSING STRAIN BY PROCESSING HIGH-PURITY COPPER FOR ELECTROPLATING, THE COPPER CRYSTAL GRAINS ON THE ANODE SURFACE ARE GIVEN A CRYSTAL GRAIN BOUNDARY STRUCTURE BY CARRYING OUT RECRYSTALLIZATION HEAT TREATMENT SUCH THAT THE SPECIAL GRAIN BOUNDARY LENGTH RATIO LN/LSN BETWEEN THE UNIT TOTAL GRAIN BOUNDARY LENGTH LN OF CRYSTAL GRAIN BOUNDARIES AND THE UNIT TOTAL SPECIAL GRAIN BOUNDARY LENGTH LSN OF SPECIAL GRAIN BOUNDARIES IS 0.35 OR GREATER. CONSEQUENTLY, PLATING FAILURES ARE REDUCED BY INHIBITING THE GENERATION OF SLIME AND OTHER PARTICLES GENERATED ON THE ANODE SIDE IN THE COPPER PLATING BATH.
Also published as:
US20130075272CN102844472KR1020130018655MYPI 2012700718WO/2011/122493