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1. EP2515396 - LASER MODULE

官庁 欧州特許庁(EPO)
出願番号 10837293
出願日 16.12.2010
公開番号 2515396
公開日 24.10.2012
公報種別 A1
IPC
H01S 5/022
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
022マウント;ハウジング
CPC
H01S 5/02476
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Cooling arrangements
02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01S 5/02272
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02256Details of fixing the laser diode on the mount
02272using soldering
H01S 5/02276
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02276Wire-bonding details
H01S 5/4031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4031Edge-emitting structures
出願人 MITSUBISHI ELECTRIC CORP
発明者 TAMAYA MOTOAKI
NANBA CHISE
YANAGISAWA TAKAYUKI
OE SHINICHI
YAMAMOTO SHUHEI
YOKOYAMA AKIRA
優先権情報 2009287703 18.12.2009 JP
2010007301 16.12.2010 JP
発明の名称
(DE) LASERMODUL
(EN) LASER MODULE
(FR) MODULE LASER
要約
(EN)
An inexpensive module structure capable of driving an LD array with low stress at a suitable temperature is obtained. The laser module includes: a heat sink (3) that releases heat from a member in contact with the heat sink (3); a sub-mount substrate (4) that is disposed on the heat sink (3) and made of an insulating material; a feeding layer (5A) that is disposed on the sub-mount substrate (4); and a laser diode array (6) that has a plurality of light-emitting portions disposed on the feeding layer (5A) in a parallel arrangement. A linear expansion coefficient of the sub-mount substrate (4) is made smaller than a linear expansion coefficient of the laser diode array (6), and the linear expansion coefficient of the sub-mount substrate (4) in a state connected to the heat sink (3) having a larger linear expansion coefficient than the laser diode array (6) is set to fall within a predetermined range including the linear expansion coefficient of the laser diode array (6).

(FR)
La présente invention a trait à une structure de module peu coûteuse permettant d'exciter un réseau de diodes lasers à une faible contrainte et à une température appropriée. Le module est équipé d'un puits de chaleur (3) permettant de libérer la chaleur provenant d'un élément qui vient en contact avec celui-ci, d'un substrat de support secondaire (4) disposé sur le puits de chaleur (3) et configuré à partir d'un matériau isolant, d'une couche d'alimentation (5A) disposée sur le substrat de support secondaire (4) et d'un réseau de diodes lasers (6) doté d'une pluralité d'éléments électroluminescents disposés en parallèle sur la couche d'alimentation (5A). Le coefficient de dilatation linéique du substrat de support secondaire (4) est inférieur au coefficient de dilatation linéique du réseau de diodes lasers (6) ; et le coefficient de dilatation linéique du substrat de support secondaire (4) lorsqu'il est connecté au puits de chaleur (3), qui est pourvu d'un coefficient de dilatation linéique supérieur à celui du réseau de diodes lasers (6), est défini de manière à se situer dans une plage prédéterminée qui inclut le coefficient de dilatation linéique du réseau de diodes lasers (6).