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1. CN103650137 - Power semiconductor module

官庁 中華人民共和国
出願番号 201280034222.4
出願日 05.07.2012
公開番号 103650137
公開日 19.03.2014
特許番号 103650137
特許付与日 29.09.2017
公報種別 B
IPC
H01L 25/07
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 25/18
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
CPC
H01L 23/3121
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
3121a substrate forming part of the encapsulation
H01L 23/3135
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
3135Double encapsulation or coating and encapsulation
H01L 23/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 25/072
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
072the devices being arranged next to each other
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
出願人 三菱电机株式会社
発明者 三木隆义
中山靖
大井健史
多田和弘
井高志织
长谷川滋
小林知宏
中岛幸夫
代理人 中国国际贸易促进委员会专利商标事务所 11038
優先権情報 2011-153020 11.07.2011 JP
発明の名称
(EN) Power semiconductor module
(ZH) 功率半导体模块
要約
(EN)
Provided is a power semiconductor module, which suppresses a temperature increase of a wide band gap semiconductor element, suppresses an increase of the total chip area of the wide band gap semiconductor element, and can be manufactured at low cost, in the case of disposing a Si semiconductor element and the wide band gap semiconductor element in a same power semiconductor module. Switching elements (4) composed of Si are disposed in a center region of a power semiconductor module (100), and diode elements (5) composed of SiC are disposed on both the sides of the center region of the power semiconductor module (100) or on a peripheral section that surrounds the center region.

(ZH)
在将Si半导体元件和宽能带隙半导体元件配置于相同的功率半导体模块内的情况下,将宽能带隙半导体元件的温度上升抑制得较低,抑制宽能带隙半导体元件的芯片总面积的增大,得到能够低成本地制造的功率半导体模块。Si制开关元件(4)配置于功率半导体模块(100)的中央区域中,SiC制二极管元件(5)配置于功率半导体模块(100)的中央区域的两侧或者包围中央区域的周边部。

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