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1. CN102656758 - Laser module

官庁 中華人民共和国
出願番号 201080057386.X
出願日 16.12.2010
公開番号 102656758
公開日 05.09.2012
公報種別 A
CPC
H01S 5/02476
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Cooling arrangements
02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01S 5/02272
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02256Details of fixing the laser diode on the mount
02272using soldering
H01S 5/02276
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02276Wire-bonding details
H01S 5/4031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4031Edge-emitting structures
出願人 Mitsubishi Electric Corp.
発明者 Tamaya Motoaki
Nanba Chise
Yanagisawa Takayuki
Oe Shinichi
Yamamoto Shuhei
yokoyama Akira
代理人 jin chunshi
優先権情報 2009-287703 18.12.2009 JP
発明の名称
(EN) Laser module
(ZH) 激光模块
要約
(EN)
Provided is an inexpensive module structure wherein it is possible to drive an LD array at low stress and at an appropriate temperature. The module is provided with a heat sink (3) for releasing the heat from a member which comes into contact therewith, a submount substrate (4) disposed on the heat sink (3) and configured from an insulating material, a feed layer (5A) disposed on the submount substrate (4), and a semiconductor laser array (6) having a plurality of light-emitting units disposed in parallel on the feed layer (5A), wherein: the linear expansion coefficient of the submount substrate (4) is smaller than the linear expansion coefficient of the semiconductor laser array (6); and the linear expansion coefficient of the submount substrate (4) when connected to the heat sink (3), which has a linear expansion coefficient higher than that of the semiconductor laser array (6), is set to be within a predetermined range which includes the linear expansion coefficient of the semiconductor laser array (6).

(ZH)

本发明得到能够以低应力并且适合的温度驱动LD阵列的廉价的模块构造。具备:散热器(3),对来自接触的部件的热进行散热;辅助装配基板(4),配置于散热器(3)之上,由绝缘材料构成;供电层(5A),配置于辅助装配基板(4)之上;以及半导体激光器阵列(6),具有并列配置于供电层(5A)之上的多个发光部,其中,使辅助装配基板(4)的线膨胀系数小于半导体激光器阵列(6)的线膨胀系数,与具有大于半导体激光器阵列(6)的线膨胀系数的散热器(3)连接了的状态下的辅助装配基板(4)的线膨胀系数成为包括半导体激光器阵列(6)的线膨胀系数在内的规定的范围内。