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1. CN102187009 - Sintered body for zno-ga2o3 sputtering target and method for producing same

官庁 中華人民共和国
出願番号 201080002918.X
出願日 27.04.2010
公開番号 102187009
公開日 14.09.2011
公報種別 A
IPC
C23C 14/34
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
C04B 35/453
C化学;冶金
04セメント;コンクリート;人造石;セラミックス;耐火物
B石灰;マグネシア;スラグ;セメント;その組成物,例.モルタル,コンクリートまたは類似の建築材料;人造石;セラミックス;耐火物;天然石の処理
35組成に特徴を持つ成形セラミック製品;セラミック組成;セラミック製品を製造するための無機化合物粉末の処理
01酸化物を基とするもの
453酸化亜鉛,酸化スズまたは酸化ビスマスまたはそれらと他の酸化物,例.亜鉛酸塩,スズ酸塩またはビスマス酸塩,の固溶体を基とするもの
C04B 35/64
C化学;冶金
04セメント;コンクリート;人造石;セラミックス;耐火物
B石灰;マグネシア;スラグ;セメント;その組成物,例.モルタル,コンクリートまたは類似の建築材料;人造石;セラミックス;耐火物;天然石の処理
35組成に特徴を持つ成形セラミック製品;セラミック組成;セラミック製品を製造するための無機化合物粉末の処理
622製造方法;セラミック製品を製造するための無機化合物粉末の処理方法
64焼成または焼結方法
CPC
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C04B 35/453
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
01based on oxide ceramics
453based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
C04B 35/64
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
64Burning or sintering processes
C04B 2235/3284
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3284Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
C04B 2235/3286
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
C04B 2235/5436
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5418expressed by the size of the particles or aggregates thereof
5436micrometer sized, i.e. from 1 to 100 micron
出願人 Ulvac Inc.
株式会社爱发科
発明者 Nagayama Satsuki
长山五月
Satonosono Kaoru
里之园馨
代理人 han deying li tao
北京华夏正合知识产权代理事务所(普通合伙) 11017
北京华夏正合知识产权代理事务所(普通合伙) 11017
優先権情報 2009-111757 01.05.2009 JP
発明の名称
(EN) Sintered body for zno-ga2o3 sputtering target and method for producing same
(ZH) ZnO-Ga2O3系溅射靶用烧结体及其制造方法
要約
(EN)
Disclosed are: a sintered body for a ZnO-Ga2O3 sputtering target, which has low resistivity and is suppressed in the formation of nodules or flakes; and a method for producing the sintered body for a ZnO-Ga2O3 sputtering target. The method for producing a sintered body for a ZnO-Ga2O3 sputtering target comprises: a step of molding a powder mixture of a zinc oxide powder and gallium oxide powder; a step of housing the molded body of the powder mixture in a container (20) that is placed in a sintering furnace (10); a step of heating the molded body to a sintering temperature of not less than 1200 DEG C but not more than 1500 DEG C, while introducing oxygen into the container (20); a step of maintaining the sintering temperature, while continuing the introduction of oxygen into the container (20); and a step of decreasing the temperature within the furnace after stopping the introduction of oxygen into the container (20). Since the container (20) is heated within the furnace and has a function of uniformizing the heat distribution of the molded body, the influence of the temperature distribution within the furnace can be eliminated, thereby improving the temperature uniformity of the molded body. Consequently, a GZO sputtering target, which has low resistivity and is suppressed in the formation of nodules, can be obtained by the method.

(ZH)

本发明的目的在于提供电阻率较低,且能抑制结瘤及片状物产生的ZnO-Ga2O3系溅射靶用烧结体及其制造方法。本发明具有:将氧化锌粉末与氧化镓粉末的混合粉末成形的工序;将混合粉末的成形体收容在设置于烧结炉(10)内的容器(20)中的工序;一边向容器(20)的内部导入氧气一边使成形体升温至1200℃以上且1500℃以下的烧结温度工序;在容器(20)内部已导入氧气的状态下保持烧结温度的工序;和在停止氧气向容器(20)内部导入的状态下使炉内部降温的工序。容器(20)具有在炉内进行加热而使成形体的热分布均匀化的功能,因此,能够排除炉内的温度分布所造成的影响,并能够提高成形体的均热性。由此,可获得低电阻且能抑制结瘤产生的GZO溅射靶。