処理中

しばらくお待ちください...

設定

設定

出願の表示

1. CN113841310 - OPTICAL SEMICONDUCTOR DEVICE

官庁
中華人民共和国
出願番号 201980094951.0
出願日 27.05.2019
公開番号 113841310
公開日 24.12.2021
公報種別 A
IPC
H01S 5/026
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
026モノリシックに集積された複数の構成,例.導波管,モニター用フォトデテクターまたは駆動素子
CPC
H01S 5/026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
H01S 5/0264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0262Photo-diodes, e.g. transceiver devices, bidirectional devices
0264for monitoring the laser-output
H01S 5/0265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0265Intensity modulators
H01S 5/0683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
068Stabilisation of laser output parameters
0683by monitoring the optical output parameters
H01S 5/1085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
1082with a special facet structure, e.g. structured, non planar, oblique
1085Oblique facets
H01S 5/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
1003Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
101Curved waveguide
出願人 MITSUBISHI ELECTRIC CORPORATION
三菱电机株式会社
発明者 NAGAO RYOSUKE
永尾龙介
OKUNUKI YUICHIRO
奥贯雄一郎
MATSUMOTO KEISUKE
松本启资
代理人 北京集佳知识产权代理有限公司 11227
北京集佳知识产权代理有限公司 11227
発明の名称
(EN) OPTICAL SEMICONDUCTOR DEVICE
(ZH) 光半导体装置
要約
(EN) This optical semiconductor device (1) comprises: a plurality of semiconductor lasers (2) that output a first beam of light from a front end side, and output a second beam of light from a rear end side on the opposite side to the front end side; an optical multiplexing circuit (4) that multiplexes the first beams of light outputted from the plurality of semiconductor lasers (2) and outputs an output beam of light (7); a plurality of waveguides (8) that guide each of the second beams of light to one end surface (12) side of the optical semiconductor device (1); and a plurality of photodetectors (9) that receive individual reflected beams of light (11), which are second beams of light that have been guided through the waveguide (8) and reflected by the one end surface (12) or inclined end surfaces (35) of a plurality of recesses (14) formed on the one end surface (12). The photodetectors (9) are disposed between the rear end sides of the semiconductor lasers (2) and either the one end surface (12) or the inclined end surfaces (35), and the second beams of light outputted from the waveguide (8) are outputted obliquely with respect to a normal to the one end surface (12) or the inclined end surfaces (35).
(ZH) 光半导体装置(1)具备:多个半导体激光器(2),它们从前端侧输出第一光,并且从与前端侧相反的一侧即后端侧输出第二光;光合波电路(4),其对从多个半导体激光器(2)输出的第一光进行合波并将输出光(7)输出;多个波导路(8),它们将第二光分别向该光半导体装置(1)的一端面(12)侧导波;以及多个光检测器(9),它们接收在波导路(8)中进行了导波的第二光分别在一端面(12)或在形成于一端面(12)的多个凹部(14)的倾斜端面(35)反射后的各个反射光(11)。光检测器(9)配置于半导体激光器(2)的后端侧与一端面(12)或倾斜端面(35)之间,从波导路(8)输出的第二光相对于一端面(12)或倾斜端面(35)的垂线倾斜地输出。