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1. CN113841310 - OPTICAL SEMICONDUCTOR DEVICE

官庁
中華人民共和国
出願番号 201980094951.0
出願日 27.05.2019
公開番号 113841310
公開日 24.12.2021
公報種別 A
IPC
H01S 5/026
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
026モノリシックに集積された複数の構成,例.導波管,モニター用フォトデテクターまたは駆動素子
CPC
H01S 5/026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
G02B 6/425
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
24Coupling light guides
42Coupling light guides with opto-electronic elements
4201Packages, e.g. shape, construction, internal or external details
4249comprising arrays of active devices and fibres
425Optical features
G02B 6/4295
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
24Coupling light guides
42Coupling light guides with opto-electronic elements
4295coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
H04B 10/503
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
50Transmitters
501Structural aspects
503Laser transmitters
H04B 10/614
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
60Receivers
61Coherent receivers
614comprising one or more polarization beam splitters, e.g. polarization multiplexed [PolMux] X-PSK coherent receivers, polarization diversity heterodyne coherent receivers
H04B 10/802
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
10Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
80Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
801using optical interconnects, e.g. light coupled isolators, circuit board interconnections
802for isolation, e.g. using optocouplers
出願人 MITSUBISHI ELECTRIC CORPORATION
三菱电机株式会社
発明者 NAGAO RYOSUKE
永尾龙介
OKUNUKI YUICHIRO
奥贯雄一郎
MATSUMOTO KEISUKE
松本启资
代理人 北京集佳知识产权代理有限公司 11227
北京集佳知识产权代理有限公司 11227
発明の名称
(EN) OPTICAL SEMICONDUCTOR DEVICE
(ZH) 光半导体装置
要約
(EN) This optical semiconductor device (1) comprises: a plurality of semiconductor lasers (2) that output a first beam of light from a front end side, and output a second beam of light from a rear end side on the opposite side to the front end side; an optical multiplexing circuit (4) that multiplexes the first beams of light outputted from the plurality of semiconductor lasers (2) and outputs an output beam of light (7); a plurality of waveguides (8) that guide each of the second beams of light to one end surface (12) side of the optical semiconductor device (1); and a plurality of photodetectors (9) that receive individual reflected beams of light (11), which are second beams of light that have been guided through the waveguide (8) and reflected by the one end surface (12) or inclined end surfaces (35) of a plurality of recesses (14) formed on the one end surface (12). The photodetectors (9) are disposed between the rear end sides of the semiconductor lasers (2) and either the one end surface (12) or the inclined end surfaces (35), and the second beams of light outputted from the waveguide (8) are outputted obliquely with respect to a normal to the one end surface (12) or the inclined end surfaces (35).
(ZH) 光半导体装置(1)具备:多个半导体激光器(2),它们从前端侧输出第一光,并且从与前端侧相反的一侧即后端侧输出第二光;光合波电路(4),其对从多个半导体激光器(2)输出的第一光进行合波并将输出光(7)输出;多个波导路(8),它们将第二光分别向该光半导体装置(1)的一端面(12)侧导波;以及多个光检测器(9),它们接收在波导路(8)中进行了导波的第二光分别在一端面(12)或在形成于一端面(12)的多个凹部(14)的倾斜端面(35)反射后的各个反射光(11)。光检测器(9)配置于半导体激光器(2)的后端侧与一端面(12)或倾斜端面(35)之间,从波导路(8)输出的第二光相对于一端面(12)或倾斜端面(35)的垂线倾斜地输出。