(EN) When backscattered electron diffraction is used to observe the normal direction ND of the rolling surface, i.e. a cross section orthogonal to the sputtering surface of the target, this tantalum sputtering target has an area ratio of crystal grains of which the {111} plane is oriented in ND of at least 35%. As a result of increasing the straightness of a sputtering material, the present invention addresses the problem of providing a tantalum sputtering target capable of uniformly forming a film of the sputtering material on a wafer surface under high-power sputtering conditions. When such a tantalum target is used to perform sputtering, film thickness uniformity and film formation throughput can be improved, even with regard to fine wiring.
(ZH) 一种钽溅射靶，其中，在使用背散射电子衍射法对作为与靶的溅射面垂直的截面的轧制面法线方向ND进行观察时，{111}面沿ND取向的晶粒的面积率为35％以上。本发明的课题在于提供在高功率溅射的情况下，通过增强溅射物质的直进性，能够在晶片面上将溅射物质均匀地成膜的钽溅射靶。在使用这样的钽靶进行溅射的情况下，即使对于微细布线而言也能够提高膜厚的均匀性和成膜的生产能力。
