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1. CN107532287 - Tantalum sputtering target, and production method therefor

官庁
中華人民共和国
出願番号 201680023081.4
出願日 17.05.2016
公開番号 107532287
公開日 02.01.2018
特許番号 107532287
特許付与日 05.11.2019
公報種別 B
IPC
C23C 14/34
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
B21J 1/02
B処理操作;運輸
21本質的には材料の除去が行なわれない機械的金属加工;金属の打抜き
J鍛造;ハンマーリング;金属のプレス;リベット締め;鍛造炉
1金属材料の調整
02特定の形に変形しない金属素材の前処理,例.偏折域の改善,素材の荒鍛造またはプレス加工
C22C 27/02
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
C合金
27レニウムまたはグループC22C14/00もしくはC22C16/00において述べられていない耐火金属を基とする合金
02バナジウム,ニオブまたはタンタルを基とする合金
C22F 1/00
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
F非鉄金属または非鉄合金の物理的構造の変化
1非鉄金属または合金の熱処理によるか熱間または冷間加工による物理的構造の変化
C22F 1/18
C化学;冶金
22冶金;鉄または非鉄合金;合金の処理または非鉄金属の処理
F非鉄金属または非鉄合金の物理的構造の変化
1非鉄金属または合金の熱処理によるか熱間または冷間加工による物理的構造の変化
16上記以外の金属またはそれを基とする合金
18高融点金属,耐火金属またはそれらを基とする合金
CPC
B21J 1/02
BPERFORMING OPERATIONS; TRANSPORTING
21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
JFORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
1Preparing metal stock ; or similar ancillary operations prior, during or post forging, e.g. heating or cooling
02Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
C22C 27/02
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
27Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
02Alloys based on vanadium, niobium, or tantalum
C22F 1/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/18
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
16of other metals or alloys based thereon
18High-melting or refractory metals or alloys based thereon
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
出願人 JX NIPPON MINING & METALS CORPORATION
捷客斯金属株式会社
発明者 NAGATSU KOTARO
永津光太郎
SENDA SHINICHIRO
仙田真一郎
代理人 中原信达知识产权代理有限责任公司 11219
中原信达知识产权代理有限责任公司 11219
優先権情報 2015-104295 22.05.2015 JP
発明の名称
(EN) Tantalum sputtering target, and production method therefor
(ZH) 钽溅射靶及其制造方法
要約
(EN) When backscattered electron diffraction is used to observe the normal direction ND of the rolling surface, i.e. a cross section orthogonal to the sputtering surface of the target, this tantalum sputtering target has an area ratio of crystal grains of which the {111} plane is oriented in ND of at least 35%. As a result of increasing the straightness of a sputtering material, the present invention addresses the problem of providing a tantalum sputtering target capable of uniformly forming a film of the sputtering material on a wafer surface under high-power sputtering conditions. When such a tantalum target is used to perform sputtering, film thickness uniformity and film formation throughput can be improved, even with regard to fine wiring.
(ZH) 一种钽溅射靶,其中,在使用背散射电子衍射法对作为与靶的溅射面垂直的截面的轧制面法线方向ND进行观察时,{111}面沿ND取向的晶粒的面积率为35%以上。本发明的课题在于提供在高功率溅射的情况下,通过增强溅射物质的直进性,能够在晶片面上将溅射物质均匀地成膜的钽溅射靶。在使用这样的钽靶进行溅射的情况下,即使对于微细布线而言也能够提高膜厚的均匀性和成膜的生产能力。