(EN) Produced is a semiconductor device (1) which comprises: an SiC epitaxial layer (28); a plurality of transistor cells (18) which are formed in the SiC epitaxial layer (28) and are ON/OFF controlled by a predetermined control voltage; a gate electrode (19) that faces a channel region (32) of each transistor cell (18), in said channel region (32) a channel is formed when the transistor cell (18) is in an ON state; a gate metal (44) that is exposed in the outermost surface for electrical connection to the outside and is electrically connected to the gate electrode (19), while being physically separated from the gate electrode (19); and a built-in resistor (21) that is formed of a polysilicon and is arranged below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electrode (19) with each other.
(ZH) 形成半导体装置1,所述半导体装置包含:SiC外延层28;多个晶体管单元18,形成于SiC外延层28,通过规定的控制电压接通/关断控制;栅极电极19,与在接通时形成沟道的晶体管单元18的沟道区域32相对;栅极金属44,为了与外部的电连接而露出到最外层表面,与栅极电极19在物理上分离,但是,电连接于栅极电极19;以及内置电阻21,被配置在栅极金属44的下方,由将栅极金属44和栅极电极19电连接的多晶硅构成。