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1. CA2784697 - LASER MODULE

官庁 カナダ
出願番号 2784697
出願日 16.12.2010
公開番号 2784697
公開日 23.06.2011
公報種別 A1
IPC
H01S 5/022
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
02レーザ作用にとって本質的ではない構造的な細部または構成
022マウント;ハウジング
CPC
H01S 5/02476
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
024Cooling arrangements
02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01S 5/02272
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02256Details of fixing the laser diode on the mount
02272using soldering
H01S 5/02276
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02276Wire-bonding details
H01S 5/4031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4031Edge-emitting structures
出願人 MITSUBISHI ELECTRIC CORPORATION
発明者 TAMAYA, MOTOAKI
NANBA, CHISE
YANAGISAWA, TAKAYUKI
OE, SHINICHI
YAMAMOTO, SHUHEI
YOKOYAMA, AKIRA
優先権情報 2009-287703 18.12.2009 JP
発明の名称
(EN) LASER MODULE
(FR) MODULE LASER
要約
(EN)
Provided is an inexpensive module structure wherein it is possible to drive an LD array at low stress and at an appropriate temperature. The module is provided with a heat sink (3) for releasing the heat from a member which comes into contact therewith, a submount substrate (4) disposed on the heat sink (3) and configured from an insulating material, a feed layer (5A) disposed on the submount substrate (4), and a semiconductor laser array (6) having a plurality of light-emitting units disposed in parallel on the feed layer (5A), wherein: the linear expansion coefficient of the submount substrate (4) is smaller than the linear expansion coefficient of the semiconductor laser array (6); and the linear expansion coefficient of the submount substrate (4) when connected to the heat sink (3), which has a linear expansion coefficient higher than that of the semiconductor laser array (6), is set to be within a predetermined range which includes the linear expansion coefficient of the semiconductor laser array (6).