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1. US20130130513 - INTERLAYER INSULATING LAYER FORMING METHOD AND SEMICONDUCTOR DEVICE

注意: このテキストは、OCR 処理によってテキスト化されたものです。法的な用途には PDF 版をご利用ください。

[ EN ]

Claims

1. An interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method, the interlayer insulating layer comprising:
carrying a substrate into a depressurized processing container;
supplying a plasma generating gas to a first space spaced apart from the substrate;
exciting the plasma generating gas in the first space; and
supplying a raw material gas comprising a boron compound that comprises at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate.
2. The interlayer insulating layer forming method of claim 1, wherein the exciting of the plasma generating gas comprises using microwaves radiated into the processing container through a slot.
3. The interlayer insulating layer forming method of claim 1, wherein the raw material gas comprises boron, carbon, and nitrogen.
4. The interlayer insulating layer forming method of claim 1, wherein the raw material gas comprises alkyl boron or alkyl amino boron.
5. The interlayer insulating layer forming method of claim 1, wherein ammonia or a hydrocarbon gas is supplied to at least any one of the first space and the second space.
6. The interlayer insulating layer forming method of claim 1, wherein a nitrogen gas is supplied to the first space.
7. (canceled)
8. (canceled)