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1. KR1020160030267 - 조합된 X­선 및 광학적 계측

Office République de Corée
Numéro de la demande 1020167003281
Date de la demande 07.07.2014
Numéro de publication 1020160030267
Date de publication 16.03.2016
Numéro de délivrance 102046216
Date de délivrance 18.11.2019
Type de publication B1
CIB
G01N 23/203
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
20en utilisant la diffraction de la radiation par les matériaux, p.ex. pour rechercher la structure cristalline; en utilisant la diffusion de la radiation par les matériaux, p.ex. pour rechercher les matériaux non cristallins; en utilisant la réflexion de la radiation par les matériaux
203en mesurant la rétrodiffusion
G01B 15/00
GPHYSIQUE
01MÉTROLOGIE; TESTS
BMESURE DE LA LONGUEUR, DE L'ÉPAISSEUR OU DE DIMENSIONS LINÉAIRES ANALOGUES; MESURE DES ANGLES; MESURE DES SUPERFICIES; MESURE DES IRRÉGULARITÉS DES SURFACES OU CONTOURS
15Dispositions pour la mesure caractérisées par l'utilisation de radiations d'ondes ou de particules
G01N 23/22
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
22en mesurant l'émission secondaire de matériaux
H01L 21/66
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
66Test ou mesure durant la fabrication ou le traitement
CPC
G01N 23/203
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
20by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
203Measuring back scattering
G01B 15/00
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
15Measuring arrangements characterised by the use of wave or particle radiation
G01N 23/2206
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
22by measuring secondary emission from the material
2206Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
G01B 2210/56
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
2210Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Déposants 케이엘에이 코포레이션
Inventeurs 피터린츠 케빈
슈체그로프 안드레이
베이크만 마이클
드지우라 사데우스 제라드
Mandataires 김태홍
김진회
Données relatives à la priorité 14/074,689 07.11.2013 US
61/843,868 08.07.2013 US
61/867,363 19.08.2013 US
Titre
(KO) 조합된 X­선 및 광학적 계측
Abrégé
(KO)
시편의 구조적 파라미터들은 조합된 분석에서 상이한 측정 기법들에 의해 수집된 측정들에 대해 시편의 응답의 모델들을 피팅함으로써 결정된다. 시편의 x-선 측정 데이터는 시편의 광학적 측정들 및 x-선 측정들 양자의 조합된 분석에서 상수로서 취급되는 적어도 하나의 시편 파라미터 값을 결정하기 위하여 분석된다. 예를 들어, 특정한 구조적 속성, 또는 시편의 원소 조성과 같은 특정한 재료 속성은 x-선 측정 데이터에 기초하여 결정된다. x-선 측정 데이터로부터 결정된 파라미터(들)는 시편의 광학적 측정들 및 x-선 측정들 양자의 추후의 조합된 분석에서 상수들로서 취급된다. 추가의 양태에서, 응답 모델들의 구조는 모델들과 대응하는 측정 데이터 사이의 피트의 품질에 기초하여 변경된다.

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