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1. CN1239600 - Semiconductor laser

Office Chine
Numéro de la demande 98801391.6
Date de la demande 21.09.1998
Numéro de publication 1239600
Date de publication 22.12.1999
Numéro de délivrance 1153319
Date de délivrance 09.06.2004
Type de publication C
CIB
H01S 3/18
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
SDISPOSITIFS UTILISANT LE PROCÉDÉ D'AMPLIFICATION DE LA LUMIÈRE PAR ÉMISSION STIMULÉE DE RAYONNEMENT POUR AMPLIFIER OU GÉNÉRER DE LA LUMIÈRE; DISPOSITIFS UTILISANT L’ÉMISSION STIMULÉE DE RAYONNEMENT ÉLECTROMAGNÉTIQUE DANS DES GAMMES D’ONDES AUTRES QU'OPTIQUES
3Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, le visible ou l’ultraviolet
14caractérisés par le matériau utilisé comme milieu actif
16Matériaux solides
18semi-conducteurs
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01S 5/2004
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2004Confining in the direction perpendicular to the layer structure
H01S 5/2009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2004Confining in the direction perpendicular to the layer structure
2009by using electron barrier layers
H01S 5/2059
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2059by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
H01S 5/3211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
3211characterised by special cladding layers, e.g. details on band-discontinuities
H01S 5/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
Déposants Nippon Sanso Corp.
日本酸素株式会社
Inventeurs Ubukata Akinori
生方映德
Mandataires yang kai
中国专利代理(香港)有限公司
中国专利代理(香港)有限公司
Données relatives à la priorité 259124/1997 24.09.1997 JP
Titre
(EN) Semiconductor laser
(ZH) 半导体激光器
Abrégé
(EN)
The present invention is to provide a semiconductor laser which has less temperature dependency on threshold current and efficiency and is capable of oscillating at high power. The conventional GaInAs/GaInAsP series semiconductor laser had higher slope efficiency and higher threshold current in lower holding temperature, and ratio of loss increased in accordance with temperature rise, and external quantum efficiency lowered and the output reduced. Thus a laser having less temperature dependency on threshold current and efficiency and capable of oscillating at high power and of utilizing in wide technical fields has been expected. The present invention relates to compressed distortion quantum well semiconductor laser using GaInAs/GaInAsP material, characterized in having band gap Egc which is bigger than the band gap Egb of the wave guide in P type wave guide 3 and N type wave guide 9, and being disposed with carrier block layer 11, 14 made of material which has smaller refraction factor than that of said wave guide.

(ZH)

本发明的目的在于提供一种阈值电流和效率的温度依存性小的、并能以高的输出功率振荡的半导体激光器。在现有的GaInAs/GaInAsP系列半导体激光器中,保持温度越低,跨导效率越高,阈值电流越大,此外,随着温度的上升,损耗系数增大,故外部量子效率下降,输出降低。因此,为了能用于更宽的技术领域,希望有一种阈值电流和效率的温度依存性小的、并以高的输出功率振荡的半导体激光器。因此,本发明的特征在于:在使用了GaInAs/GaInAsP材料的压缩应变量子阱半导体激光器中,在p型导波层3和n型导波层9中设置了具有比该导波层的带隙Egb大的带隙Egc、且由比该导波层的折射率小的材料构成的载流子阻塞层11、14。

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