Commentaires
Paramétrages

Paramétrages

Aller à Demande

1. WO2023024721 - ONDULEUR À TRANSISTOR À EFFET DE CHAMP VERTICAL AVEC DISPOSITIF À AILETTE UNIQUE

Formuler une observation
Lien permanent
Numéro de publication WO/2023/024721
Date de publication 02.03.2023
N° de la demande internationale PCT/CN2022/104388
Date du dépôt international 07.07.2022
CIB
H01L 27/02 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
27Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
02comprenant des composants semi-conducteurs spécialement adaptés pour le redressement, l'amplification, la génération d'oscillations ou la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
CPC
H01L 29/063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
063Reduced surface field [RESURF] pn-junction structures
H01L 29/66666
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66666Vertical transistors
H01L 29/66818
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66787with a gate at the side of the channel
66795with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
66818the channel being thinned after patterning, e.g. sacrificial oxidation on fin
H01L 29/7827
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7827Vertical transistors
H01L 29/785
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Déposants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM (CHINA) CO., LIMITED [CN]/[CN] (MG)
Inventeurs
  • WANG, Junli
  • XIE, Ruilong
  • REZNICEK, Alexander
  • ZHANG, Chen
Mandataires
  • LIU, SHEN & ASSOCIATES
Données relatives à la priorité
17/445,83225.08.2021US
Langue de publication Anglais (en)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) VERTICAL FIELD EFFECT TRANSISTOR INVERTER WITH SINGLE FIN DEVICE
(FR) ONDULEUR À TRANSISTOR À EFFET DE CHAMP VERTICAL AVEC DISPOSITIF À AILETTE UNIQUE
front page image
Abrégé
(EN) A vertical field-effect transistor(VTFET) inverter (100). The VTFET inverter (100) may include a p-channel field-effect transistor (P-FET) (112) with a P-FET top source/drain (114) and a P-FET bottom source/drain (116). The VTFET inverter (100) may also include an n-channel field-effect transistor (N-FET) (118) comprising an N-FET top source/drain (120) and a N-FET bottom source/drain (122). The VTFET inverter (100) may also include a buried contact (132) located at a boundary between the P-FET bottom source/drain (116) and the N-FET bottom source/drain (122). The VTFET inverter (100) may also include a Vout contact (108) electrically connected to one of the P-FET bottom source/drain (116) and the N-FET bottom source/drain (122).
(FR) L'invention concerne un onduleur à transistor à effet de champ vertical (VTFET). L'onduleur de VTFET (100) peut comprendre un transistor à effet de champ à canal p (P-FET) (112) avec une source/drain supérieure de P-FET (114) et une source/drain inférieure de P-FET (116). L'onduleur de VTFET (100) peut également comprendre un transistor à effet de champ à canal n (N-FET) (118) comprenant une source/drain supérieure de N-FET (120) et une source/drain inférieure de N-FET (122). L'onduleur de VTFET (100) peut également comprendre un contact enfoui (132) situé au niveau d'une délimitation entre la source/drain inférieure de P-FET (116) et la source/drain inférieure de N-FET (122). L'onduleur de VTFET (100) peut également comprendre un contact Vout (108) connecté électriquement à l'une des source/drain inférieure de P-FET (116) et à la source/drain inférieure de N-FET (122).
Documents de brevet associés
US20230073990
Dernières données bibliographiques dont dispose le Bureau international
# -