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1. WO2020155893 - STRUCTURE DE TROU D'INTERCONNEXION ET SON PROCÉDÉ DE FABRICATION, DISPOSITIF ÉLECTRONIQUE ET DISPOSITIF D'AFFICHAGE

Numéro de publication WO/2020/155893
Date de publication 06.08.2020
N° de la demande internationale PCT/CN2019/125656
Date du dépôt international 16.12.2019
CIB
H01L 21/768 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
70Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun, ou de parties constitutives spécifiques de ceux-ci; Fabrication de dispositifs à circuit intégré ou de parties constitutives spécifiques de ceux-ci
71Fabrication de parties spécifiques de dispositifs définis en H01L21/7089
768Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
CPC
G06F 3/0412
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
01Input arrangements or combined input and output arrangements for interaction between user and computer
03Arrangements for converting the position or the displacement of a member into a coded form
041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
0412Digitisers structurally integrated in a display
G06F 3/04164
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
01Input arrangements or combined input and output arrangements for interaction between user and computer
03Arrangements for converting the position or the displacement of a member into a coded form
041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
0416Control or interface arrangements specially adapted for digitisers
04164Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
H01L 21/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
486Via connections through the substrate with or without pins
H01L 21/76804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76804by forming tapered via holes
H01L 21/76814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76814post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
H01L 21/76816
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76816Aspects relating to the layout of the pattern or to the size of vias or trenches
Déposants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 绵阳京东方光电科技有限公司 MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD. [CN]/[CN]
Inventeurs
  • 张雷 ZHANG, Lei
  • 孙大庆 SUN, Daqing
  • 邱伟 QIU, Wei
  • 闫方亮 YAN, Fangliang
Mandataires
  • 北京三高永信知识产权代理有限责任公司 BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD.
Données relatives à la priorité
201910098927.631.01.2019CN
Langue de publication chinois (ZH)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) VIA STRUCTURE AND FABRICATING METHOD THEREFOR, ELECTRONIC DEVICE, AND DISPLAY DEVICE
(FR) STRUCTURE DE TROU D'INTERCONNEXION ET SON PROCÉDÉ DE FABRICATION, DISPOSITIF ÉLECTRONIQUE ET DISPOSITIF D'AFFICHAGE
(ZH) 过孔结构及其制造方法、电子器件、显示装置
Abrégé
(EN)
A via structure and manufacturing method therefor, an electronic device, and a display device, relating to the technical field of electronics. The via structure comprises: a first conductive layer (10), an interlayer insulating layer (20), and a second conductive layer (30) arranged in sequence. The interlayer insulating layer (20) is provided with a via (201); the second conductive layer (30) is connected to the first conductive layer (10) by means of the via (201); and at least part of the surface of the interlayer insulating layer (20) in contact with the second conductive layer (30) is uneven, so that the part of the second conductive layer (30) located in the via hole (201) is prevented from falling off, thereby avoiding the poor connection between the second conductive layer (30) and the first conductive layer (10). The via structure is used for the connection of conductive layers.
(FR)
L'invention concerne une structure de trou d'interconnexion et son procédé de fabrication, un dispositif électronique et un dispositif d'affichage, qui se rapportent au domaine technique de l'électronique. La structure de trou d'interconnexion comprend : une première couche conductrice (10), une couche isolante intermédiaire (20) et une seconde couche conductrice (30) agencées en séquence. La couche isolante intercouche (20) comporte un trou d'interconnexion (201) ; la seconde couche conductrice (30) est connectée à la première couche conductrice (10) au moyen du trou d'interconnexion (201) ; et au moins une partie de la surface de la couche isolante intercouche (20) en contact avec la seconde couche conductrice (30) est irrégulière, de telle sorte que la partie de la seconde couche conductrice (30) située dans le trou d'interconnexion (201) est empêchée de tomber, ce qui permet d'éviter la mauvaise connexion entre la seconde couche conductrice (30) et la première couche conductrice (10). La structure de trou d'interconnexion est utilisée pour la connexion de couches conductrices.
(ZH)
一种过孔结构及其制造方法、电子器件、显示装置,属于电子技术领域。所述过孔结构包括:依次设置的第一导电层(10)、层间绝缘层(20)和第二导电层(30),所述层间绝缘层(20)具有过孔(201),所述第二导电层(30)通过所述过孔(201)与所述第一导电层(10)搭接,所述层间绝缘层(20)与所述第二导电层(30)接触的至少部分表面为凹凸不平的表面。避免了第二导电层(30)位于过孔(201)内的部分脱落,从而避免了第二导电层(30)与第一导电层(10)出现搭接不良。用于导电层的搭接。
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