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1. WO2020154977 - STRUCTURE DE CONDENSATEUR AYANT DES PLAQUES DE DIFFUSION VERTICALES

Numéro de publication WO/2020/154977
Date de publication 06.08.2020
N° de la demande internationale PCT/CN2019/073987
Date du dépôt international 30.01.2019
CIB
H01L 23/64 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
58Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
64Dispositions relatives à l'impédance
CPC
H01L 23/642
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
64Impedance arrangements
642Capacitive arrangements
H01L 28/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
20Resistors
H01L 28/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
H01L 29/0692
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
H01L 29/66174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66083the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
66174Capacitors with PN or Schottky junction, e.g. varactors
H01L 29/92
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
92Capacitors with potential-jump barrier or surface barrier
Déposants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventeurs
  • CHEN, Liang
Mandataires
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
Données relatives à la priorité
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) CAPACITOR STRUCTURE HAVING VERTICAL DIFFUSION PLATES
(FR) STRUCTURE DE CONDENSATEUR AYANT DES PLAQUES DE DIFFUSION VERTICALES
Abrégé
(EN)
A capacitor structure includes a semiconductor substrate, a first vertical diffusion plate in the semiconductor substrate, a first STI structure in the semiconductor substrate and surrounding the first vertical diffusion plate, a second vertical diffusion plate in the semiconductor substrate and surrounding the first STI structure, and an ion well in the semiconductor substrate. The ion well is disposed directly under the first vertical diffusion plate, the first STI structure and the second vertical diffusion plate. The second vertical diffusion plate is electrically coupled to an anode of the capacitor structure. The first vertical diffusion plate is electrically coupled to a cathode of the capacitor structure.
(FR)
Une structure de condensateur comprend un substrat semi-conducteur, une première plaque de diffusion verticale dans le substrat semi-conducteur, une première structure STI dans le substrat semi-conducteur et entourant la première plaque de diffusion verticale, une seconde plaque de diffusion verticale dans le substrat semi-conducteur et entourant la première structure STI, et un puits d'ions dans le substrat semi-conducteur. Le puits d'ions est disposé directement sous la première plaque de diffusion verticale, la première structure STI et la seconde plaque de diffusion verticale. La seconde plaque de diffusion verticale est électriquement couplée à une anode de la structure de condensateur. La première plaque de diffusion verticale est électriquement couplée à une cathode de la structure de condensateur.
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