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1. WO2020112237 - PROCÉDÉS DE FORMATION DE MOTIFS SUR DES COUCHES MÉTALLIQUES

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

What is claimed is:

1. A method of forming a metal interconnect layer, comprising:

forming a molybdenum layer on a substrate;

forming a masking layer over the molybdenum layer;

patterning the masking layer to expose portions of the molybdenum layer; modifying the exposed portions of the molybdenum layer with oxygen to form molybdenum oxide portions of the molybdenum layer; and

removing the molybdenum oxide portions from the substrate.

2. The method of claim 1 , wherein the exposed portions of the molybdenum layer are modified by oxygen plasma doping.

3. The method of claim 1 , wherein the exposed portions of the molybdenum layer are modified by direct oxygen implantation.

4. The method of claim 1 , wherein the molybdenum oxide portions of the molybdenum layer are removed by a dry etching process.

5. The method of claim 1 , wherein the molybdenum oxide portions of the molybdenum layer are removed by a wet etching process.

6. The method of claim 5, wherein the molybdenum oxide portions of the molybdenum layer are wet etched by a pH 10 buffer solution.

7. The method of claim 5, wherein the molybdenum oxide portions of the molybdenum layer are wet etched by an ammonia solution.

8. The method of claim 1 , further comprising: annealing the substrate prior to removing the molybdenum oxide portions of the molybdenum layer by etching.

9. The method of claim 8, wherein the annealing is performed at a temperature between about 250 °C and about 550 °C and a pressure between about 25 bar and about 55 bar.

10. A method of forming a metal interconnect layer on a patterned substrate, comprising:

forming a molybdenum layer on the patterned substrate;

forming a masking layer on the molybdenum layer, the masking layer patterned to expose portions of the molybdenum layer; and

exposing the patterned substrate to an accelerated atom beam to remove the exposed areas of the molybdenum layer.

11. The method of claim 10, wherein the accelerated atom beam is a gas cluster ion beam formed by ionizing and accelerating a gas cluster comprising argon.

12. The method of claim 11 , wherein the gas cluster is accelerated at a voltage potential of about 20 KeV to 30 KeV.

13. The method of claim 11 , wherein the gas cluster ion beam further comprises one or more additional gases selected from the group consisting of oxygen, nitrogen, sulfur hexafluoride, and methane.

14. The method of claim 10, wherein the accelerated atom beam is an accelerated neutral atom beam.

15. A method of patterning a metal interconnect layer on a substrate, the method comprising:

forming a molybdenum interconnect layer on the substrate;

forming a masking layer on the molybdenum interconnect layer;

patterning the masking layer to expose portions of the molybdenum interconnect layer; and

exposing the substrate to gas-phase H2O at a partial pressure of between about 20 bar and about 55 bar and a temperature of between about 250 °C and about 550 °C to remove the exposed portions of the molybdenum interconnect layer.