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1. WO2020062855 - PROCÉDÉ ET APPAREIL PERMETTANT D'AMÉLIORER LA PRÉCISION D'EXPOSITION

Numéro de publication WO/2020/062855
Date de publication 02.04.2020
N° de la demande internationale PCT/CN2019/084490
Date du dépôt international 26.04.2019
CIB
G03F 7/20 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
CPC
G03F 7/70425
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
G03F 7/70433
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
G03F 7/70591
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70591Testing optical components
G03F 7/70616
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
G03F 7/7085
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Déposants
  • 武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventeurs
  • 桂宇畅 GUI, Yuchang
Mandataires
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Données relatives à la priorité
201811141189.028.09.2018CN
Langue de publication chinois (ZH)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) METHOD AND APPARATUS FOR IMPROVING EXPOSURE ACCURACY
(FR) PROCÉDÉ ET APPAREIL PERMETTANT D'AMÉLIORER LA PRÉCISION D'EXPOSITION
(ZH) 提高曝光精度的方法以及装置
Abrégé
(EN)
Provided are a method and apparatus for improving exposure accuracy. The method comprises: forming an exposure zone on a substrate (101); first extracting exposure points in the exposure zone to obtain an exposure point set (102); then detecting an exposure offset value that corresponds to each exposure point in the exposure point set to obtain an exposure offset value set (103); and on the basis of the exposure offset value set, correcting an exposure point that corresponds to each exposure offset value (104).
(FR)
L'invention concerne un procédé et un appareil permettant d'améliorer la précision d'exposition. Le procédé comprend : la formation d'une zone d'exposition sur un substrat (101); la première extraction de points d'exposition dans la zone d'exposition pour obtenir un ensemble de points d'exposition (102); puis la détection d'une valeur de décalage d'exposition qui correspond à chaque point d'exposition dans l'ensemble de points d'exposition pour obtenir un ensemble de valeurs de décalage d'exposition (103); et, sur la base de l'ensemble de valeurs de décalage d'exposition, la correction d'un point d'exposition qui correspond à chaque valeur de décalage d'exposition (104).
(ZH)
一种提高曝光精度的方法以及装置。这种方法包括:在基板上形成曝光区域后(101);首先提取曝光区域中的曝光点,得到曝光点集合(102);然后检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合(103);接着基于曝光偏移值集合,修正每个曝光偏移值对应的曝光点(104)。
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