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1. WO2020023953 - FORMATION DE MOTIFS SUR PLATINE PAR ALLIAGE ET GRAVURE D'ALLIAGE DE PLATINE

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

CLAIMS

What is claimed is:

1. A method of patterning platinum, comprising

depositing a platinum layer on a semiconductor substrate;

forming a patterned photoresist layer over the platinum layer leaving an exposed region in the platinum layer;

depositing an aluminum layer over the platinum layer and the exposed region;

forming an alloy of aluminum and platinum in the exposed region of the platinum layer; and

etching the aluminum layer and the alloyed aluminum and platinum at the exposed region of the platinum layer, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.

2. The method of claim 1, wherein etching of the aluminum layer and the alloyed aluminum and platinum in the exposed region of the platinum layer comprises a wet etch immersion bath process using a dilute aqua regia, 3HCL:HN03 + H20, etchant.

3. The method of claim 1, wherein etching of the aluminum layer and the alloyed aluminum and platinum in the exposed region of the platinum layer comprises a wet etch spray tool process using a dilute etchant of 3: 1 HCl:H202.

4. The method of claim 1, further comprising

forming a thin hard mask layer on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

5. The method of claim 4, wherein the thin hard mask layer is formed by physical electrochemical vapor deposition, PECVD, of Si02, and

performing a wet etch to pattern the thin hard mask according to the patterned photoresist layer, and to remove the photoresist layer.

6. The method of claim 1, wherein depositing an aluminum layer over the platinum layer and the exposed region comprises performing a sputter deposition process

7. The method of claim 1, wherein forming an alloy of aluminum and platinum at the exposed region of the platinum layer comprises annealing in a nitrogen atmosphere to form the alloy at the exposed region of the platinum layer.

8. The method of claim 1, further comprising forming an adhesive layer over the

semiconductor substrate, and before the depositing the platinum layer.

9. The method of claim 8, wherein the adhesive layer comprises aluminum oxide, Al203.

10. The method of claim 1, wherein depositing the platinum layer on the substrate includes performing a sputter deposition process.

11. The method of claim 10, wherein the platinum layer has a thickness of 0.4 pm.

12. The method of claim 6, wherein the aluminum layer has a thickness of 0.8 pm or thicker.

13. The method of claim 5, further comprising removing the thin hard mask layer by performing a short dip in HF or BHF.

14. A method of patterning platinum, comprising

depositing an adhesive layer over the semiconductor substrate

sputter depositing a platinum layer on a semiconductor substrate;

forming a patterned photoresist layer over the platinum layer leaving an exposed region in the platinum layer;

sputter depositing an aluminum layer on the platinum layer and the exposed region;

forming an alloy of aluminum and platinum at the exposed region of the platinum layer by annealing in a nitrogen atmosphere to form a PtAl2 alloy at the exposed region of the platinum layer; and

etching the aluminum layer and the alloyed aluminum and platinum at the exposed region of the platinum layer by performing a wet etch immersion bath process using a dilute aqua regia, 3HCL:HN03 + H20, etchant, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.

15. The method of claim 14, further comprising

forming a thin hard mask layer on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed, by performing a wet etch to pattern the thin hard mask according to the patterned photoresist layer and to remove the photoresist layer.

16. The method of claim 14, wherein the thin hard mask layer is formed by physical electrochemical vapor deposition, PECVD, of Si02.

17. The method of claim 15, wherein the thin hard mask layer is removed by performing a short dip in HF or BHF

18. The method of claim 14, wherein the platinum layer has a thickness of 0.4 pm, and

the aluminum layer has a thickness of 0.8 mih.

19. A method of patterning platinum, comprising

depositing a platinum layer on a semiconductor substrate;

forming a patterned photoresist layer over the platinum layer leaving an exposed region in the platinum layer;

depositing an aluminum layer over the platinum layer and the exposed region;

forming an alloy of aluminum and platinum at the exposed region of the platinum layer by annealing in a nitrogen atmosphere to form a PtAl2 alloy at the exposed region of the platinum layer; and

etching the aluminum layer and the alloyed aluminum and platinum at the exposed region of the platinum layer by performing a wet etch spray tool process using a dilute etchant of 3 : 1 HCl:H202, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.

20. The method of claim 19, comprising:

forming a thin hard mask layer on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed, by performing a wet etch to pattern the thin hard mask according to the patterned photoresist layer and to remove the photoresist layer.

21. The method of claim 20, wherein the platinum layer is deposited by a sputter deposition process and has a thickness of 0.4 pm, and the aluminum layer is deposited by a sputter deposition process and has a thickness of 0.8 pm.

22. A method of patterning platinum, comprising

depositing a platinum layer on a semiconductor substrate;

depositing an aluminum layer over the platinum layer;

forming a patterned photoresist layer over the aluminum layer leaving an exposed region in the aluminum layer;

etching the exposed region of the aluminum layer by performing a wet etch process; removing the photoresist layer;

forming an alloy of platinum and aluminum at the exposed region of the aluminum layer, in an oxygen ambient; and

etching the alloyed aluminum and platinum by performing a wet etch process using diluted platinum-etching chemical etchants, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.

23. The method of claim 22, wherein the wet etch process for etching the exposed region of the aluminum layer uses etchant material including phosphoric acid.

24. The method of claim 22, wherein the wet etch process using diluted platinum-etching chemical etchants for etching the alloyed aluminum and platinum is a wet etch spray tool process using a dilute etchant of 3 : 1 HCl:H202.

25. The method of claim 22, wherein the wet etch process using diluted platinum-etching chemical etchants for etching the alloyed aluminum and platinum is a wet etch immersion bath process using a dilute aqua regia, 3HCL:HN03 + H20, etchant.

26. A microelectronic device, comprising:

a semiconductor substrate; and

a platinum electrode on a top surface of the substrate,

wherein the platinum electrode has a thickness of > 0.1 pm.

27. The microelectronic device of claim 26, wherein the platinum electrode has a thickness of > 0.4pm.

28. The microelectronic device of claim 26, wherein the platinum electrode has a thickness in the range of > 0.1 pm. to lpm.

29. An electrochemical sensor including the microelectronic device of claim 26.

30. A resistance thermometer device, RTD, comprising the microelectronic device of claim 26.

31. A method of forming a microelectronic device, comprising:

providing a substrate having a top surface;

forming a layer of a first metal on the top surface of the substrate;

forming a patterned photoresist layer over the layer of first metal leaving an exposed region in the layer of first metal;

forming a layer of second metal over the exposed region in the layer of first metal;

forming an alloy of the first and the second metals at the exposed region of the layer of the first metal; and

etching the layer of first metal, and the alloyed first and second metals, at the exposed region of the layer of first metal, thereby leaving a remaining portion of the layer of first metal to form a patterned layer of first metal on the substrate;

wherein the first metal is an inert metal and the second metal is a metal that readily forms an etchable alloy with the inert metal, and

wherein the etchable alloy has a greater susceptibility to etching than the inert metal.

32. The method of claim 31, wherein the step of etching the layer of first metal, and the alloyed first and second metals is performed with a selective wet etch process.