Certains contenus de cette application ne sont pas disponibles pour le moment.
Si cette situation persiste, veuillez nous contacter àObservations et contact
1. (WO2019066958) CONTACTS AMÉLIORÉS DE TRANSISTORS DE TYPE N À CANAUX À CREUX EN L
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

We claim:

1. An apparatus comprising:

a first region over a substrate, wherein the first region comprises a first semiconductor material having a L-valley transport energy band structure;

a second region in contact with the first region at a junction, wherein the second region comprises a second semiconductor material having a X-valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction; and

a metal adjacent to the second region, the metal conductively coupled to the first region through the junction.

2. The apparatus of claim 1, wherein the substrate has cubic crystallinity and wherein the

junction is substantially 45 degrees to a surface of the first region nearest a (100) plane of the substrate.

3. The apparatus of claim 1, wherein the substrate has cubic crystallinity and wherein the

junction is substantially orthogonal to a surface of the first region nearest a (110) plane of the substrate.

4. The apparatus of claim 1, wherein the substrate has cubic crystallinity and wherein the

junction is substantially parallel to a surface of the first region nearest a (111) plane of the substrate.

5. The apparatus according to any one of claims 1 to 4, wherein the junction comprises a facet of the first semiconductor material.

6. The apparatus according to any one of claims 1 to 4, wherein the first semiconductor material comprises germanium or indium gallium arsenide.

7. The apparatus according to any one of claims 1 to 4, wherein the second semiconductor material comprises silicon or silicon germanium.

8. The apparatus according to any one of claims 1 to 4, wherein the second semiconductor material comprises silicon germanium with a graded concentration of germanium, the graded concentration comprising a greater than 50% concentration of germanium adjacent the junction.

9. A NMOS device comprising:

a channel region over a substrate, wherein the channel region comprises a first

semiconductor material having a L-valley transport energy band structure;

a gate stack over the channel region;

a source region in contact with the channel region at a junction, wherein the source region comprises a second semiconductor material having a X-valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction; and

a metal adjacent to the source region, the metal conductively coupled to the channel region through the junction.

10. The NMOS device of claim 9, wherein the substrate has cubic crystallinity and wherein the junction is substantially 45 degrees to a surface of the first region nearest a (100) plane of the substrate.

11. The NMOS device of claim 9, wherein the substrate has cubic crystallinity and wherein the junction is substantially orthogonal to a surface of the first region nearest a (110) plane of the substrate.

12. The NMOS device of claim 9, wherein the substrate has cubic crystallinity and wherein the junction is substantially parallel to a surface of the first region nearest a (111) plane of the substrate.

13. The NMOS device according to any one of claims 9 to 12, wherein the junction comprises a facet of the first semiconductor material.

14. The NMOS device according to any one of claims 9 to 12, wherein the first semiconductor material comprises germanium or indium gallium arsenide.

15. The NMOS device according to any one of claims 9 to 12, wherein the second semiconductor material comprises silicon or silicon germanium.

16. The NMOS device according to any one of claims 9 to 12, wherein the second semiconductor material comprises silicon germanium with a graded concentration of germanium, the graded concentration comprising a greater than 50% concentration of germanium adjacent the junction.

17. A system comprising:

a display subsystem;

a wireless communication interface; and

an integrated circuit device, the integrated circuit device comprising:

a channel region over a substrate, wherein the channel region comprises a first semiconductor material having a L-valley transport energy band structure;

a gate stack on the channel region;

a source region in contact with the channel region at a junction, wherein the source region comprises a second semiconductor material having a X- valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction; and

a metal adjacent to the source region, the metal conductively coupled to the channel region through the junction.

18. The system of claim 17, wherein the substrate has cubic crystallinity and wherein the

junction is substantially 45 degrees to a surface of the first region nearest a (100) plane of the substrate.

19. The system of claim 17, wherein the substrate has cubic crystallinity and wherein the

junction is substantially orthogonal to a surface of the first region nearest a (110) plane of the substrate.

20. The system of claim 17, wherein the substrate has cubic crystallinity and wherein the

junction is substantially parallel to a surface of the first region nearest a (111) plane of the substrate.

21. The system according to any one of claims 17 to 20, wherein the junction comprises a facet of the first semiconductor material.

22. The system according to any one of claims 17 to 20, wherein the first semiconductor material comprises germanium or indium gallium arsenide.

23. The system according to any one of claims 17 to 20, wherein the second semiconductor

material comprises silicon or silicon germanium.

24. The system according to any one of claims 17 to 20, wherein the second semiconductor

material comprises silicon germanium with a graded concentration of germanium, the graded concentration comprising a greater than 50% concentration of germanium adjacent the junction.