Certains contenus de cette application ne sont pas disponibles pour le moment.
Si cette situation persiste, veuillez nous contacter àObservations et contact
1. (WO2019066914) TRANSISTORS III-N À JONCTION DE POLARISATION EN TUNNEL
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

What is claimed is:

1. A transistor structure comprising:

a first layer comprising a first crystalline III-N material;

a second layer comprising a second crystalline III-N material;

an intervening layer other than a III-N material between the first layer and the second layer, wherein the first crystalline III-N material has a first crystal orientation and the second crystalline III-N material has a second crystal orientation inverted with respect to the first crystal orientation; and

a source, a drain, and a gate coupled to the first layer.

2. The transistor structure of claim 1, wherein the first and second crystalline III-N materials comprise gallium nitride.

3. The transistor structure of claim 1 or 2, wherein the first crystal orientation comprises a first c-axis out of plane with respect to the first layer, the second crystal orientation comprises a second c-axis out of plane with respect to the second layer, and the first c-axis and the second c-axis are substantially aligned.

4. The transistor structure of any of claims 1-3, wherein the first crystalline III-N material comprises a group Ill-face adjacent to the intervening layer and a nitrogen (N)-face opposite the intervening layer and the second crystalline III-N material comprises a group Ill-face adjacent to the intervening layer and a nitrogen (N)-face opposite the intervening layer.

5. The transistor structure of any of claims 1-3, wherein the first crystalline III-N material comprises a nitrogen (N)-face adjacent to the intervening layer and a group Ill-face opposite the intervening layer and the second crystalline III-N material comprises a nitrogen (N)-face adj acent to the intervening layer and a group Ill-face opposite the intervening layer.

6. The transistor structure of any of claims 1-5, wherein the intervening layer comprises a third crystalline material having a thickness of not more than 5 nm.

7. The transistor structure of claim 6, wherein the third crystalline material comprises oxygen and one or both of aluminum and scandium.

8. The transistor structure of any of claims 1-7, further comprising:

a third layer on the intervening layer, wherein the third layer comprises a third crystalline

III-N material having a different composition than the first crystalline III-N material and the third crystalline III-N material has a third crystal orientation that is inverted with respect to the second crystal orientation, wherein the first layer is on the third layer.

9. The transistor structure of any of claims 1-5, wherein the intervening layer comprises an amorphous material having a thickness of not more than 5 nm.

10. The transistor structure of claim 9, wherein the amorphous material comprises at least one of aluminum oxide, silicon oxide, silicon nitride, or silicon oxynitride.

11. The transistor structure of claim 1, wherein the first crystalline III-N material comprises gallium nitride having a gallium-face adjacent to the intervening layer and a nitrogen-face opposite the intervening layer, the second crystalline III-N material comprises gallium nitride having a gallium-face adjacent to the intervening layer and a nitrogen-face opposite the intervening layer, the intervening layer comprises a third crystalline material comprising oxygen and aluminum, and the source and the drain comprise n-doped indium gallium nitride.

12. A system comprising:

a memory; and

an integrated circuit coupled to the memory, the integrated circuit including a transistor structure comprising:

a first layer comprising a first crystalline III-N material;

a second layer comprising a second crystalline III-N material;

an intervening layer other than a III-N material between the first layer and the second layer, wherein the first crystalline III-N material has a first crystal orientation and the second crystalline III-N material has a second crystal orientation inverted with respect to the first crystal orientation; and

a source, a drain, and a gate coupled to the first layer.

13. The system of claim 12, wherein the transistor structure comprises a PMOS transistor structure and the integrated circuit further comprises:

a substrate, wherein the first layer is on the substrate; and

an NMOS transistor structure comprising:

a third layer on the substrate, the third layer comprising a third crystalline III-N material;

a polarization layer on the third layer; and

a second source, a second drain, and a second gate coupled to the third layer.

14. The system of claim 12 or 13, wherein the first crystalline III-N material comprises a group Ill-face adjacent to the intervening layer and a nitrogen (N)-face opposite the intervening layer and the second crystalline III-N material comprises a group Ill-face adjacent to the intervening layer and a nitrogen (N)-face opposite the intervening layer.

15. The system of any of claims 12-14, wherein the third crystalline III-N material comprises a group Ill-face adjacent to the polarization layer and a nitrogen (N)-face opposite the polarization layer.

16. The system of any of claims 12-15, wherein the first, second, and third crystalline III-N materials comprise gallium nitride and the source, the drain, the second source, and the second drain comprise n-doped indium gallium nitride.

17. The system of any of claims 12-16, wherein the intervening layer comprises a fourth crystalline material having a thickness of not more than 5 nm, the fourth crystalline material comprising oxygen and aluminum.

18. The system of any of claims 12-17, wherein the integrated circuit comprises one of a power management integrated circuit (PMIC) or a radio frequency integrated circuit (RFIC).

19. A method for fabricating a transistor structure comprising:

forming a first layer comprising a first crystalline III-N material over a substrate;

disposing a second layer other than a III-N material over the first layer and a third layer comprising a second crystalline III-N material over the second layer, wherein the first crystalline III-N material has a first crystal orientation and the second crystalline III-N material has a second crystal orientation inverted with respect to the first crystal orientation; and

forming a source, a drain, and a gate coupled to the third layer.

20. The method of claim 19, wherein the second crystalline III-N material comprises a group Ill-face adjacent to the second layer and a nitrogen (N)-face opposite the second layer and the first crystalline III-N material comprises a group Ill-face adjacent to the second layer and a nitrogen (N)-face opposite the second layer.

21. The method of claim 19 or claim 20, wherein forming the first layer, disposing the second layer, and disposing the third layer each comprises an epitaxial growth of the first layer, the second layer, and the third layer, respectively.

22. The method of claim 19 or claim 20, wherein disposing the third layer over the second layer comprises:

forming the third layer by epitaxial growth on a second substrate;

contacting the third layer with the second layer; and

removing the second substrate.

23. The method of claim 22, wherein the second layer comprises an amorphous material having a thickness of not more than 5 nm.

24. The method of claim 19, further comprising:

forming a fourth layer on the second layer, wherein the fourth layer comprises a third crystalline III-N material having a different composition than the second crystalline III-N material and the third crystalline III-N material has a third crystal orientation that is inverted with respect to the first crystal orientation, wherein disposing the third layer over the second layer comprises an epitaxial growth of the third layer from the third crystalline III-N material.

25. The method of claim 19, wherein the third crystalline III-N material comprises gallium nitride having a gallium-face adjacent to the second layer and a nitrogen-face opposite the second layer, the first crystalline III-N material comprises gallium nitride having a gallium-face adjacent to the second layer and a nitrogen-face opposite the second layer, the second layer comprises a

third crystalline material comprising oxygen and aluminum, and the source and the drain comprise n-doped indium gallium nitride.