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1. (WO2019066789) STRUCTURES DE NANORUBAN III-N ÉPITAXIALES POUR LA FABRICATION DE DISPOSITIFS
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

We claim:

1. A semiconductor structure, comprising:

an island comprising a first III-N material, wherein the island extends over a substrate and has a sloped sidewall; and

a cap comprising a second III-N material, wherein the cap extends laterally from a top surface of the island and overhangs the sidewall of the island.

2. The semiconductor structure of claim 1, wherein the island extends over a length of the substrate and the cap extends over the island along the length.

3. The semiconductor structure of claim 1, wherein the island is a first island, and the structure further comprises a second island and a third island with the first island therebetween, wherein the second and third islands extend the length over the substrate and comprise the same III-N material as the first island.

4. The semiconductor structure of claim 3, wherein cap extends laterally over a first separation between the first island and the second island, and extends laterally over a second separation between the first island and the third island.

5. The semiconductor structure of according to any one of claims 3 or 4, further comprising a dielectric material within the first and second separations.

6. The semiconductor structure of claim 3, wherein the second and third islands have a first sidewall adjacent to the first island, and wherein the first sidewall has a steeper slope than the sidewall of the first island.

7. The semiconductor structure of claims 1, wherein the first III-N material has a different composition than the second III-N material, the island extends from a seed layer comprising a third III-N material disposed on the substrate, and the third III-N material has a different composition than the first III-N material.

8. The semiconductor structure of claim 1, further comprising at least one layer on the cap, the at least one layer comprising a fourth III-N material different from the second III-N material.

9. The semiconductor structure of claim 1, wherein at least a portion of the island comprises one of a group II element or a group IV element.

10. The semiconductor structure of claim 1, wherein the first and second III-N materials are substantially monocrystalline and have the same crystallographic orientation.

11. The semiconductor structure of claim 10, wherein at least one of the first and second III- N materials is one of GaN, AIN. InN, AlGaN, InAlN, or InGaN.

12. A system, comprising:

a memory; and

a processor coupled to the memory, the processor comprising

a semiconductor structure, comprising:

an island comprising a first III-N material, wherein the island extends over a length of a substrate and has a sloped sidewall; and

a cap having a top, a bottom, a width and a length, and extends over the island along the length of the cap, wherein the cap comprises a second III-N material, wherein the width of the cap extends laterally from a top surface of the island and overhangs the sidewall of the island; and

one or more device terminals coupled to the cap.

13. The system of claim 12, wherein the semiconductor structure comprises one of a transistor, a light emitting diode or a resonator.

14. The system of claim 13, wherein:

the semiconductor structure comprises the transistor, and wherein the cap comprises a polarization layer, wherein the polarization layer extends over the second III-N material of the cap, and comprises a third III-N material having a composition distinct from the second III-N material of the cap, the third III-N material comprises at least one of AIN, AlGaN or InAlN; or

the semiconductor structure comprises the light-emitting diode, and wherein the cap comprises a quantum well layer, wherein the quantum well layer extends over a portion of the second III-N material of the cap, and comprises one or more alternating layers comprising a first layer comprising a fourth III-N material that has a bandgap sufficiently different from the bandgap of the cap material, and a second layer comprising the second III-N material of the cap, wherein the fourth III-N material comprises an InGaN alloy having a composition that ranges from 5% to 40% indium.

15. The system of claim 14, wherein the semiconductor structure comprises the transistor, and wherein the one or more device terminals coupled to the cap include a gate electrode over at least a portion of the dielectric layer that extends over one or more portions of the polarization layer,

a source region adjacent to a first side of the dielectric layer and a drain region adjacent to a second side of the dielectric layer, the first side opposite the second side, and wherein the one or more device terminals coupled to the cap include a source electrode over the source region and a drain electrode over the drain region, and wherein:

the source region and the drain region extend from the dielectric layer along the width of the cap; or

the source region and the drain region extend from the dielectric layer along the length of the cap.

16. The system of claim 15, wherein the one or more device terminals are portions of the island comprising silicon coupled to the bottom of the source region and the drain region of the cap, the portions of the island comprising silicon are distributed lengthwise along the island.

17. The system of claim 13, wherein the semiconductor structure comprises the light-emitting diode, and wherein a layer of a III-N material comprising magnesium extends over the quantum well layer, and wherein the one or more device terminals coupled to the cap include a transparent electrode disposed over the layer of a III-N material comprising magnesium.

18. The system of claim 13, wherein the semiconductor structure comprises the light-emitting diode, and wherein the one or more device terminals coupled to the cap include regions of the island comprising silicon that couple to the cap through the top of the island.

19. The system of claim 13, wherein the semiconductor structure comprises the resonator, and wherein the one or more device terminals coupled to the cap include regions of the island comprising silicon that couple to the cap through the top of the island, wherein the cap comprises A1N.

20. A method for making a semiconductor structure, comprising:

forming one or more openings within a first dielectric layer over a substrate; growing an island comprising a first III-N material within individual ones of the openings, wherein the islands extend over a length of the substrate and extend over a portion of the first dielectric layer;

sloping a sidewall of the island by decomposing the first III-N material; and growing a cap comprising a second III-N material over a top surface of the island and laterally from the top surface to overhang the sloped sidewall.

21. The method for making a semiconductor structure of claim 20, further comprising forming a second dielectric layer over the first dielectric layer, wherein an interface is formed between the second dielectric layer and the sidewall.

22. The method for making a semiconductor structure of according to any of claims 20 through 21, wherein forming a second dielectric layer over the first dielectric layer comprises depositing a tensile-stressed dielectric material.

23. The method for making a semiconductor structure of claim 20, wherein decomposing the first III-N material forms a second island from an edge portion of the first island.

24. The method for making a semiconductor structure of according to any one of claims 20 or 23, wherein decomposing the island comprises heating the III-N islands to a temperature of 1000°C or more in atmosphere rich in hydrogen and lean in nitrogen.

25. The method for making a semiconductor structure of according to any one of claims 20 or 23, wherein growing the cap comprises lateral epitaxial overgrowth from the top surface of the first island.