Certains contenus de cette application ne sont pas disponibles pour le moment.
Si cette situation persiste, veuillez nous contacter àObservations et contact
1. (WO2019005542) AMÉLIORATION D'IMAGE POUR L'ALIGNEMENT PAR MÉLANGE D'ÉCLAIRAGES INCOHÉRENTS
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

We claim:

1. A method comprising:

opening a camera shutter in a maskless lithography system;

directing light from a configuration of non-adjacent mirrors in a mirror array towards a first substrate layer;

capturing and accumulating an image of the first substrate layer on a camera;

repeating the directing and the capturing using different configurations of non-adjacent mirrors to cover an entire field-of-view (FOV) of the camera on the first substrate layer;

closing the camera shutter; and

storing the accumulated image in memory,

2. The method of claim 1 wherein the configuration of non-adjacent mirrors is an alternating pattern of a mirror turned ON to receive light next to a mirror turned OFF that does not receive light,

3. The method of claim 1 wherein the configuration of non-adjacent mirrors is a recurring sequence of a mirror turned ON to receive light followed by two mirrors turned OFF that do not receive light.

4. The method of claim 1 further comprising:

measuring actual mark locations on the first substrate layer from the accumulated images of the first substrate layer by using image processing; and comparing designed mark locations for the first substrate layer to the actual mark locations; and

determining, from the comparing of the designed mark locations for the first substrate layer, an offset of the actual mark locations on the first substrate layer.

5. The method of claim 1 further comprising:

opening the camera shutter;

directing light from the configuration of non-adjacent mirrors towards a second substrate layer that is on top of the first substrate layer;

capturing and accumulating, continually, an image of the second substrate layer;

repeating the directing and the capturing using different configurations of non-adjacent mirrors to cover the entire FOV of the camera on the second substrate layer; and

closing the camera shutter

6. The method of claim 5 further comprising:

measuring actual mark locations on the second substrate layer from the accumulated images of the second substrate layer using image processing to determine the actual mark locations within the FOV of the camera;

comparing designed mark locations for the second substrate layer to the actual mark locations on the second substrate layer; and

determining, from the comparing designed mark locations for the second substrate layer, an offset of the actual mark locations on the second substrate layer.

7. The method of claim 5 further comprising:

measuring actual mark locations on the second substrate layer from the accumulated images of the second substrate layer;

comparing designed mark locations for the first substrate layer to the actual mark locations on the second substrate layer; and

determining, from the comparing design mark locations for the second substrate layer, an offset to align the actual mark locations on the second substrate layer to the designed mark locations on the first substrate layer.

8. A method comprising:

opening a camera shutter in a maskless lithography system;

moving a substrate;

directing light from at least one configuration of non-adjacent mirrors to the moving substrate;

capturing and accumulating, continuously, images in the camera to cover an entire camera field-of-view (FOV) on a first substrate layer on the moving substrate;

closing the camera shutter; and

storing the accumulated image in memory,

9. The method of claim 8 further comprising:

measuring actual mark locations on the first substrate layer from the accumulated images of the first substrate layer by using image processing;

comparing designed mark locations for the first substrate layer to the actual mark locations; and

determining, from the comparing designed mark locations for the first substrate layer, an offset of the actual mark locations on the first substrate layer.

10. The method of claim 8 further comprising:

moving the substrate;

opening the camera shutter;

directing light from the at least one configuration of non-adjacent mirrors to the moving substrate;

capturing and accumulating, continuously, images to cover the entire FOV on a second substrate layer on the moving substrate;

closing the camera shutter; and

storing the accumulated image in memory.

12. The method of claim 1 1 further comprising:

measuring actual mark locations on the second substrate layer from the accumulated images of the second substrate layer by using image processing; comparing designed mark locations for the second substrate layer to the actual mark locations on the second substrate layer; and

determining, from the comparing designed mark locations for the second substrate layer, an offset of the actual mark locations on the second substrate layer.

13. The method of claim 1 1 further comprising:

measuring actual mark locations on the second substrate layer from the accumulated images of the second substrate layer by using image processing; comparing designed mark locations for the first substrate layer to the actual mark locations on the second substrate layer; and

determining, from the comparison of the designed mark locations for the second substrate layer, an offset to align the actual mark locations on the second substrate layer to the designed mark locations on the first substrate layer.

14. A lithography system comprising:

a light source;

a mirror array is adapted to have a configuration of non-adjacent mirrors, to receive light from the light source and is adapted to reflect light towards a substrate layer;

a beam splitter adapted to receive the light reflected from the mirror array and light reflected from the substrate layer;

a camera coupled to the beam splitter and adapted to capture and accumulate images on the substrate layer that are visible due to the light reflected from the substrate layer; and

a processor coupled to the light source and the mirror array to select the configuration of non-adjacent mirrors, the beam splitter, and the camera.

15. The system of claim 14 further comprising:

a stage that is adapted to support the substrate layer, wherein a position of the stage is fixed with respect to the substrate layer, the stage is adapted to receive instructions from the process to move in at least one of a direction parallel to an X-axis and a direction parallel to a Y-axis, while the camera captures images; and wherein, the processor is adapted to change the configuration of non-adjacent mirrors to at least one other configuration of non-adjacent mirror while the camera captures images.