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1. (WO2019005168) SÉLECTEUR À BASE DE MATÉRIAU À CHANGEMENT DE PHASE POUR DISPOSITIFS DE MÉMOIRE BIPOLAIRE BASSE TENSION ET LEURS PROCÉDÉS DE FABRICATION
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CLAIMS

What is claimed is:

1. A memory device comprising:

a wordline above a substrate;

a selector element above the wordline, the selector element comprising a phase change material;

a bipolar memory element above the wordline;

a conductive electrode between the selector element and the bipolar memory element; and

a bitline above the wordline.

2. The memory device of claim 1, wherein the phase change material comprises Ge and Te.

3. The memory device of claim 2, wherein the phase change material further comprises Sb.

4. The memory device of claim 2, wherein the phase change material comprises a dopant selected from the group consisting of indium, gallium, nitrogen and silicon.

5. The memory device of claim 4, wherein the dopant concentration is between 5% and 20% of the total composition of the phase change material.

6. The memory device ofs claim 1, wherein the selector element has a threshold turn-on voltage that is less than or equal to IV.

7. The memory device of claim 1, wherein the selector element is above the bipolar memory element.

8. The memory device of claim 1, wherein the selector element is below the bipolar memory element.

9. The memory device of claim 1, wherein the bipolar memory element comprises a resistive random access memory (RRAM) device.

10. The memory device of claim 1, wherein the bipolar memory element comprises a magnetic tunnel junction (MTJ) device.

11. A memory device comprising:

a first bitline above a substrate;

a first memory cell on the first bitline, the first memory device comprising:

a first selector element above the first bitline, the first selector element comprising a phase change material;

a first bipolar memory element above the first bitline;

a first conductive electrode between the selector element and the bipolar memory element;

a wordline on the first memory device;

a second memory device on the wordline, the second memory device comprising:

a second selector element above the wordline, the second selector element comprising a phase change material;

a second bipolar memory element above the wordline;

a second conductive electrode between the second selector element and the second bipolar memory element; and

a second bitline on the second memory device.

12. The memory device of claim 11, wherein the phase change material comprises Ge and Te.

13. The memory device of claim 12, wherein the phase change material further comprises Sb.

14. The memory device of claim 13, wherein the phase change material comprises a dopant selected from the group consisting of indium, gallium, nitrogen and silicon.

15. The memory device of claim 14, wherein the dopant concentration is between 5 and 20 atomic percent of the total composition of the phase change material.

16. The memory device of claim 11, wherein the first selector element and the second selector element each have a threshold turn on voltage that is less than or equal to IV.

17. The memory device of claim 11, wherein the first selector element is above the first bipolar memory element, and the second selector element is below the second bipolar memory element.

18. The memory device of claim 11, wherein the first selector element is below the first bipolar memory element and the second selector element is above the second bipolar memory element.

19. The memory device of claim 11, wherein the first bipolar memory and the second bipolar memory element each comprise a resistive random access memory (RRAM) device.

20. The memory device of claim 11, wherein the first bipolar memory and the second bipolar memory element each comprise a magnetic tunnel junction (MTJ) device.

21. Method to fabricate a memory device comprising:

forming a bitline in a first dielectric layer above a substrate;

forming a bipolar memory material layer stack above the bitline;

forming a conductive electrode layer above the bipolar memory material layer stack; forming a selector material layer comprising a phase change material on the conductive electrode layer;

forming a hardmask layer above the selector material layer;

patterning the hardmask layer to form a hardmask;

using the patterned hardmask to pattern the selector material layer to form a selector element;

patterning the conductive electrode layer to form a conductive electrode;

using the hardmask to pattern bipolar memory material layer stack;

forming a second dielectric layer on the hardmask, on sidewalls of the selector element and on sidewalls of the bipolar memory element;

planarizing the second dielectric layer to expose an uppermost surface of the bipolar memory element; and

forming a wordline on the uppermost surface of the bipolar memory element and on an uppermost surface of the second dielectric layer.

22. The method of claim 21, further includes doping the selector material layer during a selector material layer deposition process with one or elements selected from the group consisting of indium, gallium, nitrogen or silicon, wherein the total amount of the one or more elements is between 5 and 20 atomic percent of the total composition of the selector material layer.

The method of claim 21, wherein forming the bipolar memory material layer stack

comprises forming a material layer stack for a resistive random access memory device.

24. The method of claim 21, wherein forming the bipolar memory material layer stack comprises forming a material layer stack for a magnetic tunnel junction device.

25. The method of claim 21, wherein forming the bitline comprises forming a first electrode having a length along a first direction, and forming the wordline includes depositing a conductive material on the second dielectric layer and pattering the conductive material to form the wordline comprising an electrode having a length orthogonal to the first direction.