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1. WO2017012940 - PROCÉDÉ DE FABRICATION D'UN SUBSTRAT

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Numéro de publication WO/2017/012940
Date de publication 26.01.2017
N° de la demande internationale PCT/EP2016/066609
Date du dépôt international 13.07.2016
CIB
H01L 21/02 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
CPC
H01L 21/02002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02002Preparing wafers
H01L 21/02367
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
H01L 21/02436
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
H01L 41/083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
083having a stacked or multilayer structure
H01L 41/1873
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
1873Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
H01L 41/312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
Déposants
  • SOITEC [FR]/[FR]
Inventeurs
  • GUENARD, Pascal
  • BROEKAART, Marcel
  • BARGE, Thierry
Mandataires
  • GRÜNECKER PATENT- UND RECHTSANWÄLTE PARTG MBB
Données relatives à la priorité
150151917.07.2015FR
Langue de publication Français (fr)
Langue de dépôt français (FR)
États désignés
Titre
(EN) METHOD FOR MANUFACTURING A SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT
front page image
Abrégé
(EN) The invention relates to a method for manufacturing a substrate, comprising the following steps: (a) providing a support substrate (10) with a first coefficient of thermal expansion, having on one of its faces a first plurality of parallel trenches (13) extending in a first direction, and a second plurality of parallel trenches (13) extending in a second direction; (b) transferring a useful layer (31) from a donor substrate (30) to the support substrate (10), the useful layer (31) having a second coefficient of thermal expansion; the manufacturing method being characterised in that an intermediate layer is intercalated between the front face (11) of the support substrate (10) and the useful layer (31), the intermediate layer (20) having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.
(FR) L'invention concerne un Procédé de fabrication d'un substrat, comprenant les étapes suivantes : a. Fournir un substrat support (10) présentant un premier coefficient de dilation thermique, comprenant sur une de ses faces une première pluralité de tranchées (12) parallèles entre elles selon une première direction, et une seconde pluralité de tranchées (13) parallèles entre elles selon une seconde direction; b. Transférer une couche utile (31), à partir d'un substrat donneur (30), sur le substrat support (10), la couche utile (31) présentant un second coefficient de dilatation thermique; le procédé de fabrication étant caractérisé en ce que une couche de intermédiaire est intercalée entre la face avant (11) du substrat support (10) et la couche utile (31), la couche intermédiaire (20) présentant un coefficient de dilation compris entre le premier et le second coefficient de dilatation thermique.
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