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1. (WO2015179050) MATRICE DE MÉMOIRE VIVE STATIQUE À HAUTE DENSITÉ À FORMATION DE MOTIFS MÉTALLIQUES AVANCÉE
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CLAIMS

WHAT IS CLAIMED IS:

1. A method for fabricating a static random access memory, comprising:

forming, using a self-aligning double patterning technique, a plurality of substantially parallel first metal lines oriented in a first direction in a first layer;

etching the substantially parallel first metal lines, using a cut mask, in a second direction substantially perpendicular to the first direction, to separate the substantially parallel first metal lines into a plurality of islands having first respective sides that are substantially aligned in the first direction and second respective sides that are substantially aligned the second direction;

forming, in a second layer, a plurality of second metal lines oriented in the first direction; and

forming a silicon-germanium p-type metal-oxide-silicon passgate transistor including a gate coupled to a second metal line in the plurality of second metal lines and a drain coupled to an island in the plurality of islands.

2. The method of claim 1, wherein an island in the plurality of islands is configured as one of a bit line, a positive power conductor, and a negative power conductor.

3. The method of claim 1, wherein a second metal line in the plurality of second metal lines is configured as a word line.

4. The method of claim 1, further comprising integrating the static random access memory into at least one of a mobile device, a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant, fixed location data unit, and a computer.

5. An apparatus, comprising:

a static random access memory including:

a plurality of metal islands formed on a substrate and having first respective sides that are substantially aligned in a first direction and second respective sides that are substantially aligned in a second direction except for every third island; a plurality of metal lines in a second layer and oriented in the first direction; and

a silicon-germanium p-type metal-oxide-silicon passgate transistor including a gate coupled to a metal line in the plurality of second metal lines and a drain coupled to an island in the plurality of metal islands.

6. The apparatus of claim 5, wherein at least a part of the apparatus is integrated on a semiconductor die.

7. The apparatus of claim 5, further comprising at least one of a base station and a mobile device, with which the static random access memory is integrated.

8. The apparatus of claim 5, further comprising at least one of a mobile device, a base station, a terminal, a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant, a fixed location data unit, and a computer, of which the static random access memory is a constituent part.

9. A non-transitory computer-readable medium, comprising:

lithographic device-executable instructions stored thereon configured to cause a lithographic device to execute a method including:

forming, using a self-aligning double patterning technique, a plurality of substantially parallel first metal lines oriented in a first direction in a first layer;

etching the substantially parallel first metal lines, using a cut mask, in a second direction substantially perpendicular to the first direction, to separate the substantially parallel first metal lines into a plurality of islands having first respective sides that are substantially aligned in the first direction and second respective sides that are substantially aligned the second direction;

forming, in a second layer, a plurality of second metal lines oriented in the first direction; and

forming a silicon-germanium p-type metal-oxide-silicon passgate transistor including a gate coupled to a second metal line in the plurality of second metal lines and a drain coupled to an island in the plurality of islands.

10. The non-transitory computer-readable medium of claim 9, wherein the method further comprises configuring an island in the plurality of islands as one of a bit line, a positive power conductor, and a negative power conductor.

1 1. The non-transitory computer-readable medium of claim 9, wherein the method further comprises configuring an island in the plurality of islands as a word line.

12. A method for fabricating a static random access memory, comprising:

a step for forming, using a self-aligning double patterning technique, a plurality of substantially parallel first metal lines oriented in a first direction in a first layer; a step for etching the substantially parallel first metal lines, using a cut mask, in a second direction substantially perpendicular to the first direction, to separate the substantially parallel first metal lines into a plurality of islands having first respective sides that are substantially aligned in the first direction and second respective sides that are substantially aligned the second direction;

a step for forming, in a second layer, a plurality of second metal lines oriented in the first direction; and

a step for forming a silicon-germanium p-type metal-oxide-silicon passgate transistor including a gate coupled to a second metal line in the plurality of second metal lines and a drain coupled to an island in the plurality of islands.

13. The method of claim 12, wherein an island in the plurality of islands is configured as one of a bit line, a positive power conductor, and a negative power conductor.

14. The method of claim 12, wherein a second metal line in the plurality of second metal lines is configured as a word line.

15. The method of claim 12, further comprising a step for integrating the static random access memory into at least one of a mobile device, a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant, fixed location data unit, and a computer.