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1. (WO2015177541) MATÉRIAUX DIÉLECTRIQUES POUR FONCTIONNEMENT DE TRANSISTOR ORGANIQUE À EFFET DE CHAMP À BASSE TENSION
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

1 . An organic thin film transistor comprising a semiconductor layer and a gate dielectric layer, and a continuous intermediate layer disposed therebetween, wherein

a) the gate dielectric layer has a thickness of 50 nm - 1 μηι and comprises 2 - 1 1 wt.% of nanoparticles dispersed in a polymer matrix, the nanoparticles having an average particle size of 20 - 200 nm and a high dielectric constant, and the polymer matrix having a high dielectric constant; and

b) the intermediate layer has a thickness of 10 - 55 nm and comprises a

polymeric material having a low dielectric constant.

2. The organic thin film transistor of claim 1 , wherein the gate dielectric layer has a thickness of 50 - 300 nm.

3. The organic thin film transistor of claim 1 or 2, wherein the gate dielectric layer has a thickness of 100 - 200 nm.

4. The organic thin film transistor of claim 1 , 2 or 3, wherein the gate dielectric layer comprises 3 - 8 wt.% of nanoparticles dispersed in a polymer matrix.

5. The organic thin film transistor of any preceding claim, wherein the gate dielectric layer comprises 4 - 7 wt.% of nanoparticles dispersed in a polymer matrix.

6. The organic thin film transistor of any preceding claim, wherein the nanoparticles are identical or different.

7. The organic thin film transistor of any preceding claim, wherein the nanoparticles have a dielectric constant of greater than 10.

8. The organic thin film transistor of any preceding claim, wherein the nanoparticles have a dielectric constant of greater than 15.

9. The organic thin film transistor of any preceding claim, wherein the nanoparticles are formed from inorganic material.

10. The organic thin film transistor of any preceding claim, wherein the nanoparticles are formed from one or more ABC>3-type perovskites.

1 1 . The organic thin film transistor of any preceding claim, wherein the nanoparticles are formed from one or more AB03-type perovskites selected from the group consisting of barium strontium titanate, barium zirconate, calcium titanate, calcium zirconate, and barium titanate.

12. The organic thin film transistor of any preceding claim, wherein the nanoparticles are formed from barium strontium titanate, barium zirconate or a mixture thereof.

13. The organic thin film transistor of any preceding claim, wherein the nanoparticles have an average particle size of 20 - 100 nm.

14. The organic thin film transistor of any preceding claim, wherein the nanoparticles have an average particle size of 20 - 50 nm.

15. The organic thin film transistor of any preceding claim, wherein the polymer matrix has a dielectric constant of greater than 5.

16. The organic thin film transistor of any preceding claim, wherein the polymer matrix has a dielectric constant of greater than 9.

17. The organic thin film transistor of any preceding claim, wherein the polymer matrix is formed from one or more homopolymers or copolymers.

18. The organic thin film transistor of any preceding claim, wherein the polymer matrix is formed from poly(vinylidene fluoride-co-hexafluoropropylene) [P(VDF-HFP)].

19. The organic thin film transistor of any preceding claim, wherein the intermediate layer has a thickness of 15 - 35 nm.

20. The organic thin film transistor of any preceding claim, wherein the intermediate layer has a dielectric constant of less than 4.

21 . The organic thin film transistor of any preceding claim, wherein the intermediate layer is formed from one or more homopolymers or copolymers.

22. The organic thin film transistor of claim 21 , wherein the one or more homopolymers or copolymers is cross-linked.

23. The organic thin film transistor of any preceding claim, wherein the intermediate layer is formed from cross-linked poly(4-vinylphenol), polystyrene, poly(methyl methacrylate), or a copolymer thereof.

24. The organic thin film transistor of any preceding claim, wherein the intermediate layer is formed from poly(4-vinylphenol) cross-linked with poly(melamine-co-formaldehyde).

25. The organic thin film transistor of any preceding claim, wherein the semiconductor layer comprises one or more suitable materials selected from small molecules, polycrystalline polymers, amorphous polymers and small molecule/polymer blends.

26. The organic thin film transistor of any preceding claim, wherein the semiconductor layer comprises PDPPTT, DNTT, 6,13-bis(triisopropylsilylethynyl)pentacene, or a blend of 6,13-Bis(triisopropylsilylethynyl)pentacene and poly(a-methylstyrene).

27. The organic thin film transistor of any preceding claim, wherein the semiconductor layer comprises a blend of 6,13-Bis(triisopropylsilylethynyl)pentacene and poly(a-methylstyrene).

28. The organic thin film transistor of any preceding claim, wherein the configuration of the transistor is selected from the group consisting of bottom-gate bottom-contact, bottom-gate top-contact, top-gate bottom-contact and top-gate top-contact.

29. A process for the preparation of an organic thin film transistor as claimed in any preceding claim, the process comprising the steps of:

a) providing a gate electrode,

b) applying the dielectric layer to an exposed surface of the gate electrode, c) applying the intermediate layer to the exposed surface of the dielectric layer, and

d) applying the semiconductor layer to the exposed surface of the intermediate layer.

30. The process of claim 29, wherein the dielectric layer is applied to the gate electrode as a dispersion.

31 . The process of claim 30, wherein the dielectric layer dispersion contains at least one organic solvent.

32. The process of any of claims 29, 30 or 31 , wherein step b) comprises spin coating an exposed surface of the gate electrode with the dielectric layer.

33. The process of claim 32, wherein step b) further comprises the step of heating the spin coated dielectric layer at a temperature of 70 - 1 10°C.

34. The process of any of claims 20 to 33, wherein the intermediate layer is applied to the dielectric layer as a solution.

35. The process of claim 34, wherein the intermediate layer solution comprises at least one organic solvent.

36. The process of any of claims 29 to 35, wherein step c) comprises spin coating the exposed surface of the dielectric layer with the intermediate layer.

37. The process of claim 36, wherein step c) further comprises the step of heating the spin coated intermediate layer at a temperature of 1 10 - 150 °C.

38. The process of any of claims 29 to 37, wherein the semiconductor layer is applied to the intermediate layer as a solution.

39. The process of any of claims 29 to 38, wherein step d) comprises spin coating the exposed surface of the intermediate layer with the semiconductor layer.

40. The process of any of claims 29 to 39, wherein step d) further comprises heating the spin coated semiconductor layer at a temperature of 40 - 120°C.

41 . The process of any of claims 29 to 40, further comprising the step of providing source and drain electrodes.

42. An electronic device comprising an organic thin film transistor as claimed in any of claims 1 to 28.

43. The electronic device of claim 42, wherein the device is portable or wearable.

44. Use of an organic thin film transistor as claimed in any of claims 1 to 28 for water sensing applications.