Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

Aller à Demande

1. WO2014202866 - PROCÉDÉ DE FABRICATION D'UNE PLURALITÉ DE STRUCTURES

Numéro de publication WO/2014/202866
Date de publication 24.12.2014
N° de la demande internationale PCT/FR2014/051406
Date du dépôt international 11.06.2014
CIB
H01L 21/762 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
70Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun, ou de parties constitutives spécifiques de ceux-ci; Fabrication de dispositifs à circuit intégré ou de parties constitutives spécifiques de ceux-ci
71Fabrication de parties spécifiques de dispositifs définis en H01L21/7089
76Réalisation de régions isolantes entre les composants
762Régions diélectriques
CPC
H01L 21/02238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
0223formation by oxidation, e.g. oxidation of the substrate
02233of the semiconductor substrate or a semiconductor layer
02236group IV semiconductor
02238silicon in uncombined form, i.e. pure silicon
H01L 21/02255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
02255formation by thermal treatment
H01L 21/2255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
2251Diffusion into or out of group IV semiconductors
2254from or through or into an applied layer, e.g. photoresist, nitrides
2255the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 21/67098
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
H01L 21/67309
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
673using specially adapted carriers ; or holders; Fixing the workpieces on such carriers or holders
67303Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
67309characterized by the substrate support
Déposants
  • SOITEC [FR]/[FR]
Inventeurs
  • LANDRU, Didier
  • KONONCHUK, Oleg
  • GOURDEL, Christophe
  • DAVID, Carole
  • MOUGEL, Sébastien
  • SCHNEIDER, Xavier
Mandataires
  • BREESE, Pierre
Données relatives à la priorité
130143718.06.2013FR
Langue de publication Français (fr)
Langue de dépôt français (FR)
États désignés
Titre
(EN) METHOD FOR PRODUCING A PLURALITY OF STRUCTURES
(FR) PROCÉDÉ DE FABRICATION D'UNE PLURALITÉ DE STRUCTURES
Abrégé
(EN) This method comprises the steps of a) providing a chamber (10) suitable for receiving a plurality of structures (S), b) circulating a gas stream (F) in the chamber (10) such that the chamber (10) has a non-oxidising atmosphere, c) heat treating the plurality of structures (S) at a temperature higher than a threshold value above which the oxygen present in the dielectric oxide diffuses through the active layer, reacts with the semi-conductive material of the active layer, and produces a volatile material, the method being remarkable in that step b) is carried out such that the gas stream (F) has a circulation speed between the plurality of structures (S) higher than the speed of diffusion of the volatile material in the gas stream.
(FR) Ce procédé comportant les étapes a) fourniture d'une enceinte (10) adaptée pour recevoir la pluralité de structures (S), b) circulation d'un flux gazeux (F) dans l'enceinte (10) de sorte que l'enceinte (10) présente une atmosphère non oxydante, c) traitement thermique de la pluralité de structures (S) à une température supérieure à une valeur seuil au-delà de laquelle l'oxygène présent dans l'oxyde du diélectrique diffuse à travers la couche active, réagit avec le matériau semi-conducteur de la couche active, et produit un matériau volatil, le procédé étant remarquable en ce que l'étape b) est exécutée de sorte que le flux gazeux (F) présente une vitesse de circulation entre la pluralité de structures (S) supérieure à la vitesse de diffusion du matériau volatil dans le flux gazeux.
Dernières données bibliographiques dont dispose le Bureau international