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1. WO2013135075 - PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE RÉSEAU, SUBSTRAT DE RÉSEAU ET DISPOSITIF D'AFFICHAGE

Numéro de publication WO/2013/135075
Date de publication 19.09.2013
N° de la demande internationale PCT/CN2012/085702
Date du dépôt international 30.11.2012
CIB
H01L 27/02 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
27Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
02comprenant des composants semi-conducteurs spécialement adaptés pour le redressement, l'amplification, la génération d'oscillations ou la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
CPC
G02F 1/1362
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
G02F 1/136236
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136231for reducing the number of lithographic steps
136236using a grey or half tone lithographic process
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
H01L 27/3262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
326special geometry or disposition of pixel-elements
3262of TFT
H01L 29/66969
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Déposants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventeurs
  • 宁策 NING, Ce
  • 刘翔 LIU, Xiang
Mandataires
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Données relatives à la priorité
201210071825.316.03.2012CN
Langue de publication Chinois (zh)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) ARRAY SUBSTRATE MANUFACTURING METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE RÉSEAU, SUBSTRAT DE RÉSEAU ET DISPOSITIF D'AFFICHAGE
(ZH) 阵列基板的制作方法、阵列基板及显示装置
Abrégé
(EN) Provided are an array substrate manufacturing method, an array substrate and a display device. The array substrate manufacturing method comprises: respectively forming a gate electrode (1), an active layer (3), a source electrode (5a), a drain electrode (5b) and a pixel electrode (4) through a configuration process. The source electrode (5a), the drain electrode (5b) and the pixel electrode (4) are formed through a primary configuration process.
(FR) L'invention concerne un procédé de fabrication d'un substrat de réseau, un substrat de réseau et un dispositif d'affichage. Le procédé de fabrication du substrat de réseau comprend respectivement : la formation d'une électrode de grille (1), d'une couche active (3), d'une électrode source (5a), d'une électrode de drain (5b) et d'une électrode de pixel (4) par l'intermédiaire d'un processus de configuration. L'électrode de source (5a), l'électrode de drain (5b) et l'électrode de pixel (4) sont formées par l'intermédiaire d' un processus de configuration primaire.
(ZH) 提供一种阵列基板的制作方法、阵列基板以及显示装置。该阵列基板的制作方法包括通过构图工艺分别形成栅电极(1)、有源层(3)、源电极(5a)、漏电极(5b)以及像素电极(4)。源电极(5a)、漏电极(5b)和像素电极(4)通过一次构图工艺形成。
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