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1. WO2013092833 - PROCEDE DE TEXTURATION DE LA SURFACE D'UN SUBSTRAT DE SILICIUM, SUBSTRAT STRUCTURE ET DISPOSITIF PHOTOVOLTAÏQUE COMPORTANT UN TEL SUBSTRAT STRUCTURE

Numéro de publication WO/2013/092833
Date de publication 27.06.2013
N° de la demande internationale PCT/EP2012/076338
Date du dépôt international 20.12.2012
CIB
H01L 31/0236 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
02Détails
0236Textures de surface particulières
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 31/02363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02363of the semiconductor body itself, e.g. textured active layers
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/035281
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
035281Shape of the body
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Déposants
  • TOTAL MARKETING SERVICES [FR]/[FR]
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR]
  • ECOLE POLYTECHNIQUE [FR]/[FR]
Inventeurs
  • HABKA, Nada
  • BULKIN, Pavel
  • ROCA i CABARROCAS, Pere
Mandataires
  • CROONENBROEK, Thomas
Données relatives à la priorité
FR110403822.12.2011FR
Langue de publication français (FR)
Langue de dépôt français (FR)
États désignés
Titre
(EN) PROCESS FOR TEXTURING THE SURFACE OF A SILICON SUBSTRATE, STRUCTURED SUBSTRATE AND PHOTOVOLTAIC DEVICE COMPRISING SUCH A STRUCTURED SUBSTRATE
(FR) PROCEDE DE TEXTURATION DE LA SURFACE D'UN SUBSTRAT DE SILICIUM, SUBSTRAT STRUCTURE ET DISPOSITIF PHOTOVOLTAÏQUE COMPORTANT UN TEL SUBSTRAT STRUCTURE
Abrégé
(EN)
The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.
(FR)
L'invention concerne un procédé de texturation de la surface d'un substrat de silicium, comprenant une étape d'exposition de ladite surface à un plasma MDECR d'une puissance comprise entre 1.5W/cm 2 et 6.5W/cm 2, généré par un plasma à résonance cyclotronique électronique distribuée en matrice avec au moins de l'argon, et une polarisation du substrat comprise entre 100V et 300V.
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