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1. WO2012003311 - CELLULE SOLAIRE DOTÉE D'UN MOYEN DE COLLECTE DE PHOTONS

Numéro de publication WO/2012/003311
Date de publication 05.01.2012
N° de la demande internationale PCT/US2011/042585
Date du dépôt international 30.06.2011
CIB
H02N 6/00 2006.01
HÉLECTRICITÉ
02PRODUCTION, CONVERSION OU DISTRIBUTION DE L'ÉNERGIE ÉLECTRIQUE
NMACHINES ÉLECTRIQUES NON PRÉVUES AILLEURS
6Générateurs dans lesquels le rayonnement lumineux est directement converti en énergie électrique
CPC
H01L 31/03529
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
03529Shape of the potential jump barrier or surface barrier
H01L 31/047
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
047PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
H01L 31/0543
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
0543comprising light concentrating means of the refractive type, e.g. lenses
H01L 31/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
065the potential barriers being only of the graded gap type
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
Déposants
  • INTELLECTUAL PROPERTY, LLC [US/US]; 8030 Stagecoach Road Cross Plains, WI 53528, US (AllExceptUS)
  • REINING, William, N. [US/US]; US (UsOnly)
Inventeurs
  • REINING, William, N.; US
Mandataires
  • HUNT, Jason, M.; Lathrop & Clark LLP 740 Regent Street, Suite 400 P.O. Box 1507 Madison, WI 53701-1507, US
Données relatives à la priorité
61/360,25330.06.2010US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) SOLAR CELL WITH PHOTON COLLECTING MEANS
(FR) CELLULE SOLAIRE DOTÉE D'UN MOYEN DE COLLECTE DE PHOTONS
Abrégé
(EN)
A solar cell is disclosed. The solar cell includes a p-type doped semiconductor material and an n-type doped semiconductor material laterally adjacent to the p-type material. The p-type material and n-type material from a stripped structure with finite depth, and form a vertically structured diode at the junction of the p-type material and n-type material. The vertically structured diode has its depth determined by a multiple of an electromagnetic skin depth of at least one of the p-type material or n-type material, and a width of a depletion layer is controlled by a doping concentration of the p-type and n-type material. A solar cell having a refractory material forming an optical element provided on a sun facing surface of the solar cell and adapted to direct photons to a depletion region of a vertically structured photodiode is also disclosed.
(FR)
La présente invention a trait à une cellule solaire. La cellule solaire inclut un matériau semi-conducteur à dopage de type p et un matériau semi-conducteur à dopage de type n latéralement adjacent au matériau de type p. Le matériau de type p et le matériau de type n forment une structure en bande ayant une profondeur finie et forment une diode à structure verticale à la jonction entre le matériau de type p et le matériau de type n. La diode à structure verticale présente une profondeur qui est déterminée par un multiple d'une profondeur de pénétration électromagnétique du matériau de type p et/ou du matériau de type n et la largeur d'une couche d'appauvrissement est régulée par la concentration de dopage du matériau de type p et du matériau de type n. La présente invention a également trait à une cellule solaire présentant un matériau réfractaire qui forme un élément optique disposé sur une surface faisant face au soleil de la cellule solaire et conçu de manière à diriger les photons vers une couche d'appauvrissement d'une photodiode à structure verticale.
Également publié en tant que
DE112011102199
Dernières données bibliographiques dont dispose le Bureau international