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1. WO2012002764 - DISPOSITIFS DE CIRCUIT ÉLECTRIQUE À CONVERGENCE MÉTAL SEMI-CONDUCTEUR ET SYSTÈMES DE CIRCUIT ÉLECTRIQUE UTILISANT CEUX-CI

Numéro de publication WO/2012/002764
Date de publication 05.01.2012
N° de la demande internationale PCT/KR2011/004838
Date du dépôt international 01.07.2011
CIB
H01L 23/36 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
34Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
36Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
CPC
H01L 2224/45109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45101the principal constituent melting at a temperature of less than 400°C
45109Indium (In) as principal constituent
H01L 2224/45111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45101the principal constituent melting at a temperature of less than 400°C
45111Tin (Sn) as principal constituent
H01L 2224/45116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45101the principal constituent melting at a temperature of less than 400°C
45116Lead (Pb) as principal constituent
H01L 2224/45118
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45118Zinc (Zn) as principal constituent
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
H01L 2224/45139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45139Silver (Ag) as principal constituent
Déposants
  • 한국전자통신연구원 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 대전 유성구 가정동 161 161, Gajeong-dong, Yuseong-gu Daejeon 305-700, KR (AllExceptUS)
  • 김현탁 KIM, Hyun-Tak [KR/KR]; KR (UsOnly)
  • 김봉준 KIM, Bong Jun [KR/KR]; KR (UsOnly)
Inventeurs
  • 김현탁 KIM, Hyun-Tak; KR
  • 김봉준 KIM, Bong Jun; KR
Mandataires
  • 권혁수 KWON, Hyuk-Soo; 서울 강남구 역삼동 827-25 3층 3rd Fl., 827-25 Yeoksam-dong, Kangnam-ku Seoul 135-080, KR
Données relatives à la priorité
10-2010-006350001.07.2010KR
10-2010-012838015.12.2010KR
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) METAL-SEMICONDUCTOR CONVERGENCE ELECTRIC CIRCUIT DEVICES AND ELECTRIC CIRCUIT SYSTEMS USING THE SAME
(FR) DISPOSITIFS DE CIRCUIT ÉLECTRIQUE À CONVERGENCE MÉTAL SEMI-CONDUCTEUR ET SYSTÈMES DE CIRCUIT ÉLECTRIQUE UTILISANT CEUX-CI
Abrégé
(EN)
Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.
(FR)
Cette invention se rapporte à des dispositifs de circuit électrique à convergence métal semi-conducteur. Le dispositif comprend un dispositif à semi-conducteur, un résisteur métallique qui présente une résistance qui augmente lorsque sa température augmente, et une ligne d'interconnexion qui connecte en série le dispositif à semi-conducteur et le résisteur métallique et qui présente une résistance inférieure à celle du résisteur métallique. Le dispositif à semi-conducteur est configuré de façon à présenter une résistance qui diminue lorsque sa température augmente et à compenser l'augmentation de la résistance du résisteur métallique.
Également publié en tant que
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