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Paramétrages

1. WO2012002271 - CELLULE SOLAIRE, CELLULE SOLAIRE ÉQUIPÉE D'UN CÂBLAGE, MODULE DE CELLULES SOLAIRES, ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE ÉQUIPÉE D'UN CÂBLAGE

Numéro de publication WO/2012/002271
Date de publication 05.01.2012
N° de la demande internationale PCT/JP2011/064526
Date du dépôt international 24.06.2011
CIB
H01L 31/04 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
H01L 31/048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
048Encapsulation of modules
H01L 31/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
0504specially adapted for series or parallel connection of solar cells in a module
0516specially adapted for interconnection of back-contact solar cells
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
547Monocrystalline silicon PV cells
Déposants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府大阪市阿倍野区長池町22番22号 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP (AllExceptUS)
  • 安武 健司 YASUTAKE, Kenji; null (UsOnly)
  • 道祖尾 泰史 SAINOO, Yasushi; null (UsOnly)
Inventeurs
  • 安武 健司 YASUTAKE, Kenji; null
  • 道祖尾 泰史 SAINOO, Yasushi; null
Mandataires
  • 特許業務法人深見特許事務所 Fukami Patent Office, p.c.; 大阪府大阪市北区中之島二丁目2番7号 中之島セントラルタワー Nakanoshima Central Tower, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Données relatives à la priorité
2010-15107101.07.2010JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) SOLAR CELL, SOLAR CELL PROVIDED WITH WIRING, SOLAR CELL MODULE, AND METHOD FOR MANUFACTURING SOLAR CELL PROVIDED WITH WIRING
(FR) CELLULE SOLAIRE, CELLULE SOLAIRE ÉQUIPÉE D'UN CÂBLAGE, MODULE DE CELLULES SOLAIRES, ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE ÉQUIPÉE D'UN CÂBLAGE
(JA) 太陽電池セル、配線付き太陽電池セル、太陽電池モジュールおよび配線付き太陽電池セルの製造方法
Abrégé
(EN)
Disclosed is a solar cell (8) which is provided with a substrate (1), first electrodes (6, 7), which are provided on one surface of the substrate (1), and first film layers (66, 67), which cover the surfaces of the first electrodes (6, 7). The first film layers (66, 67) are composed of a material that does not easily generate ion migration compared with the metal material that constitutes the first electrodes (6, 7). Also disclosed are a solar cell provided with wiring, a solar cell module, and a method for manufacturing the solar cell provided with the wiring.
(FR)
L'invention concerne une cellule solaire (8) qui comprend un substrat (1), des premières électrodes (6, 7) disposées sur une surface du substrat (1), et des premières couches de films (66, 67) qui recouvrent les surfaces des premières électrodes (6,7). Les premières couches de films (66, 67) sont composées d'un matériau qui ne génère pas facilement une migration d'ions par rapport au matériau métallique qui constitue les premières électrodes (6, 7). L'invention concerne également une cellule solaire équipée d'un câblage, un module de cellules solaires, et un procédé de fabrication de la cellule solaire équipée du câblage.
(JA)
 基板(1)と、基板(1)の一方の面側に設けられた第1の電極(6,7)と、第1の電極(6,7)の表面を覆う第1の被覆層(66,67)と、を備え、第1の被覆層(66,67)は第1の電極(6,7)を構成する金属材料よりもイオンマイグレーションが起こり難い材料からなる太陽電池セル(8)、配線付き太陽電池セル、太陽電池モジュールおよび配線付き太陽電池セルの製造方法である。
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