Traitement en cours

Veuillez attendre...

PATENTSCOPE sera indisponible durant quelques heures pour des raisons de maintenance le dimanche 05.04.2020 à 10:00 AM CEST
Paramétrages

Paramétrages

1. WO2012001935 - APPAREIL D'IMAGERIE À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE L'APPAREIL D'IMAGERIE À SEMI-CONDUCTEURS

Numéro de publication WO/2012/001935
Date de publication 05.01.2012
N° de la demande internationale PCT/JP2011/003635
Date du dépôt international 24.06.2011
CIB
H01L 27/146 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
27Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
14comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement
144Dispositifs commandés par rayonnement
146Structures de capteurs d'images
CPC
H01L 2224/80895
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
80001by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
808Bonding techniques
80894Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
80895between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
H01L 2224/80896
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
80001by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
808Bonding techniques
80894Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
80896between electrically insulating surfaces, e.g. oxide or nitride layers
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/1464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1464Back illuminated imager structures
Déposants
  • CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP (AllExceptUS)
  • KOBAYASHI, Masahiro [JP/JP]; JP (UsOnly)
Inventeurs
  • KOBAYASHI, Masahiro; JP
Mandataires
  • ABE, Takuma; C/O CANON KABUSHIKI KAISHA, 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP
Données relatives à la priorité
2010-14948830.06.2010JP
2011-13865722.06.2011JP
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SOLID-STATE IMAGING APPARATUS
(FR) APPAREIL D'IMAGERIE À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE L'APPAREIL D'IMAGERIE À SEMI-CONDUCTEURS
Abrégé
(EN)
A solid-state imaging apparatus includes a first substrate that includes a plurality of photoelectric conversion units, a second substrate that includes at least a part of a readout circuit configured to read signals based on electric charges of the plurality of photoelectric conversion units and a peripheral circuit including a control circuit, and a wiring structure that is disposed between the first substrate and the second substrate and includes a pad portion electrically connected to the peripheral circuit via a draw-out wiring and an insulating layer. The wiring structure has, at least at a part thereof, a seal ring disposed in such a way as to surround the photoelectric conversion units and the peripheral circuit.
(FR)
L'invention porte sur un appareil d'imagerie à semi-conducteurs comprenant un premier substrat qui comprend une pluralité d'unités de conversion photoélectrique, un second substrat qui comprend au moins une partie d'un circuit de lecture configuré pour lire des signaux sur la base des charges électriques de la pluralité d'unités de conversion photoélectriques et un circuit périphérique comprenant un circuit de commande, et une structure de câblage qui est disposée entre le premier substrat et le second substrat et comprend une partie tampon connectée électriquement au circuit périphérique par l'intermédiaire d'un câblage amovible et d'une couche d'isolation. La structure de câblage a, au moins à une partie, une bague d'étanchéité disposée de façon à entourer les unités de conversion photoélectrique et le circuit périphérique.
Également publié en tant que
Dernières données bibliographiques dont dispose le Bureau international