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1. WO2012000687 - CRÉATIONS DE MICROTROUS

Numéro de publication WO/2012/000687
Date de publication 05.01.2012
N° de la demande internationale PCT/EP2011/003302
Date du dépôt international 04.07.2011
CIB
B26F 1/28 2006.01
BTECHNIQUES INDUSTRIELLES; TRANSPORTS
26OUTILS POUR TAILLER À MAIN; COUPE; SÉPARATION
FPERFORATION; DÉCOUPAGE À L'EMPORTE-PIÈCES; DÉCOUPAGE; POINÇONNAGE; SÉPARATION PAR DES MOYENS AUTRES QUE LA COUPE
1Perforation; Découpage à l'emporte-pièces; Découpage; Poinçonnage; Appareillage à cet effet
26Perforation par des moyens non mécaniques, p.ex. par un jet de fluide
28par décharges électriques
CPC
B26F 1/28
BPERFORMING OPERATIONS; TRANSPORTING
26HAND CUTTING TOOLS; CUTTING; SEVERING
FPERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
1Perforating; Punching; Cutting-out; Stamping-out; Apparatus therefor
26Perforating by non-mechanical means, e.g. by fluid jet
28by electrical discharges
C03C 23/00
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
23Other surface treatment of glass not in the form of fibres or filaments
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
486Via connections through the substrate with or without pins
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/0248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
Déposants
  • SCHOTT AG [DE/DE]; Hattenbergstrasse 10 55122 Mainz, DE (AllExceptUS)
  • NATTERMANN, Kurt [DE/DE]; DE (UsOnly)
  • PEUCHERT, Ulrich [DE/DE]; DE (UsOnly)
  • MÖHL, Wolfgang [DE/DE]; DE (UsOnly)
Inventeurs
  • NATTERMANN, Kurt; DE
  • PEUCHERT, Ulrich; DE
  • MÖHL, Wolfgang; DE
Mandataires
  • HERDEN, Andreas; Blumbach & Zinngrebe Alexandrastrasse 5 65187 Wiesbaden, DE
Données relatives à la priorité
10 2010 025 968.302.07.2010DE
Langue de publication allemand (DE)
Langue de dépôt allemand (DE)
États désignés
Titre
(DE) ERZEUGUNG VON MIKROLÖCHERN
(EN) CREATION OF MICROHOLES
(FR) CRÉATIONS DE MICROTROUS
Abrégé
(DE)
Verfahren und Vorrichtung zur Erzeugung einer Vielzahl von Löchern (12) in dünnen, plattenförmigen Werkstücken (1) aus dielektrischem Material sowie aus Halbleitern. Die Lochungsstellen werden durch HF-Ankopplungspunkte (10) markiert und mittels HF-Energie zum Erweichen gebracht, um dort dielektrische Durchbrüche (11) zu erzielen. Die Durchbrüche (11) werden zu Löchern (12) aufgeweitet.
(EN)
A method and a device for creating a multiplicity of holes (12) in thin workpieces (1) in sheet form of dielectric material and semiconductors. The perforating points are marked by RF coupling points (10) and are softened by means of RF energy in order to achieve dielectric breakthroughs (11) there. The breakthroughs (11) are widened into holes (12).
(FR)
Procédé et dispositif pour ménager une pluralité de trous (12) dans des pièces (1) en forme de plaques fines en matériau diélectrique et en semi-conducteurs. Les points de perforation sont marqués par des points de couplage HF (10) et ramollis au moyen d'une énergie HF afin de réaliser en ces emplacements des ruptures diélectriques (11) qui sont ensuite élargies pour former des trous (12).
Dernières données bibliographiques dont dispose le Bureau international