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1. WO2011155319 - SUBSTRAT DE NITRURE D'ALUMINIUM POUR UNE CARTE DE CIRCUIT IMPRIMÉ ET SON PROCÉDÉ DE PRODUCTION

Numéro de publication WO/2011/155319
Date de publication 15.12.2011
N° de la demande internationale PCT/JP2011/061823
Date du dépôt international 24.05.2011
CIB
C04B 35/581 2006.1
CCHIMIE; MÉTALLURGIE
04CIMENTS; BÉTON; PIERRE ARTIFICIELLE; CÉRAMIQUES; RÉFRACTAIRES
BCHAUX; MAGNÉSIE; SCORIES; CIMENTS; LEURS COMPOSITIONS, p.ex. MORTIERS, BÉTON OU MATÉRIAUX DE CONSTRUCTION SIMILAIRES; PIERRE ARTIFICIELLE; CÉRAMIQUES; RÉFRACTAIRES; TRAITEMENT DE LA PIERRE NATURELLE
35Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques
515à base de non oxydes
58à base de borures, nitrures ou siliciures
581à base de nitrure d'aluminium
CPC
C04B 2235/3205
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
C04B 2235/3217
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
C04B 2235/3222
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
3222Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
C04B 2235/3225
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
3225Yttrium oxide or oxide-forming salts thereof
C04B 2235/386
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
38Non-oxide ceramic constituents or additives
3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
386Boron nitrides
C04B 2235/5436
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5418expressed by the size of the particles or aggregates thereof
5436micrometer sized, i.e. from 1 to 100 micron
Déposants
  • 電気化学工業株式会社 DENKI KAGAKU KOGYO KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 原田 祐作 HARADA Yusaku [JP]/[JP] (UsOnly)
  • 寺野 克典 TERANO Katsunori [JP]/[JP] (UsOnly)
  • 後藤 猛 GOTOH Takeshi [JP]/[JP] (UsOnly)
Inventeurs
  • 原田 祐作 HARADA Yusaku
  • 寺野 克典 TERANO Katsunori
  • 後藤 猛 GOTOH Takeshi
Mandataires
  • 園田 吉隆 SONODA Yoshitaka
Données relatives à la priorité
2010-13066508.06.2010JP
Langue de publication Japonais (ja)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) ALUMINIUM NITRIDE SUBSTRATE FOR CIRCUIT BOARD AND PRODUCTION METHOD THEREOF
(FR) SUBSTRAT DE NITRURE D'ALUMINIUM POUR UNE CARTE DE CIRCUIT IMPRIMÉ ET SON PROCÉDÉ DE PRODUCTION
(JA) 回路基板用窒化アルミニウム基板及びその製造方法
Abrégé
(EN) Disclosed is an aluminium nitride substrate for a circuit board that has aluminium crystals with an average particle diameter of 2-5 µm. Said aluminium nitride substrate, which has a thermal conductivity of at least 170 W/m·K, does not contain a dendritic inter-granular phase and has a breakdown voltage of at least 30 kV/mm at 400 ºC. Also provided is a production method for said aluminium nitride substrate wherein raw material containing aluminium nitride powder is pressed at a pressure up to 150 Pa and at up to 1500 ºC, the temperature is then increased to 1700-1900 ºC in a pressurised atmosphere of at least 0.4 MPa using a non-oxidising gas. After being held, a process is provided that cools the aluminium nitride to 1600 ºC at a rate of 10 ºC/minute.
(FR) L'invention porte sur un substrat de nitrure d'aluminium pour une carte de circuit imprimé, qui possède des cristaux d'aluminium ayant une granulométrie moyenne de 2 à 5 µm. Ce substrat de nitrure d'aluminium, qui a une conductivité thermique d'au moins 170 W/m·K, ne contient pas de phase intergranulaire dendritique et a une tension de claquage d'au moins 30 V/mm à 400°C. L'invention porte aussi sur un procédé de production dudit substrat de nitrure d'aluminium, dans lequel une matière première contenant une poudre de nitrure d'aluminium est comprimée sous une pression allant jusqu'à 150 Pa et à une température allant jusqu'à 1500°C, puis la température est augmentée à 1700-1900°C dans une atmosphère sous pression d'au moins 0,4 MPa par utilisation d'un gaz non oxydant. Après maintien en température, le procédé prévoit un refroidissement du nitrure d'aluminium à 1600°C à une vitesse de 10°C/minute.
(JA)  平均粒子径が2~5μmである窒化アルミニウム結晶粒子を有し、熱伝導率が170W/m・K以上である回路基板用窒化アルミニウム基板において、樹枝状の粒界相を含有せず、400℃における絶縁破壊電圧が30kV/mm以上である、回路基板用窒化アルミニウム基板が開示される。また、窒化アルミニウム粉末を含む原料を圧力150Pa以下で1500℃まで加熱し、その後、非酸化性ガスで圧力0.4MPa以上の加圧雰囲気として1700~1900℃まで昇温、保持した後、1600℃まで10℃/分以下の冷却速度で冷却する工程を具備する、回路基板用窒化アルミニウム基板の製造方法が提供される。
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