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1. WO2011154477 - OSCILLATEUR A TRANSFERT DE SPIN

Numéro de publication WO/2011/154477
Date de publication 15.12.2011
N° de la demande internationale PCT/EP2011/059558
Date du dépôt international 09.06.2011
CIB
H01F 10/32 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
FAIMANTS; INDUCTANCES; TRANSFORMATEURS; EMPLOI DE MATÉRIAUX SPÉCIFIÉS POUR LEURS PROPRIÉTÉS MAGNÉTIQUES
10Pellicules magnétiques minces, p.ex. de structure à un domaine
32Multicouches couplées par échange de spin, p.ex. superréseaux à structure nanométrique
CPC
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
H01F 10/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01F 10/3254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
H01F 10/3259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3254the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
3259Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
H01F 10/3268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
H03B 15/006
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
006using spin transfer effects or giant magnetoresistance
Déposants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET ENERGIES ALTERNATIVES [FR]/[FR] (AllExceptUS)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR]/[FR] (AllExceptUS)
  • BARADUC, Claire [FR]/[FR] (UsOnly)
  • DIENY, Bernard [FR]/[FR] (UsOnly)
  • THIRION, Christophe [FR]/[FR] (UsOnly)
  • DE MESTIER DU BOURG, Nicolas [FR]/[FR] (UsOnly)
Inventeurs
  • BARADUC, Claire
  • DIENY, Bernard
  • THIRION, Christophe
  • DE MESTIER DU BOURG, Nicolas
Mandataires
  • LEBKIRI, Alexandre
Données relatives à la priorité
105453009.06.2010FR
Langue de publication Français (fr)
Langue de dépôt français (FR)
États désignés
Titre
(EN) SPIN TRANSFER OSCILLATOR
(FR) OSCILLATEUR A TRANSFERT DE SPIN
Abrégé
(EN) The present invention relates to a spin transfer oscillator (30) comprising a magnetic stack (E) including at least two magnetic layers (32, 34), at least one of said two magnetic layers, referred to as the oscillating layer (32), has variable direction magnetization and a current supply means (31, 35) capable of causing the flow of a current of electrons perpendicularly to the plane of said magnetic stack (E). The magnetic stack (E) comprises means (33) capable of generating inhomogeneities of current at the level of the surface of said oscillating layer and the intensity of the current supplied by said supply means (31, 35) is selected such that the magnetization of said oscillating layer has a consistent magnetic configuration, said magnetic configuration oscillating as a whole at the same fundamental frequency.
(FR) La présente invention concerne un oscillateur (30) à transfert de spin comportant un empilement magnétique (E) incluant au moins deux couches magnétiques (32,34) dont au moins une desdites deux couches magnétiques, dite couche oscillante (32), a une aimantation de direction variable et des moyens d'alimentation (31, 35) en courant aptes à faire circuler un courant d'électrons perpendiculairement au plan dudit empilement magnétique (E). L'empilement magnétique (E) comportant des moyens (33) aptes à générer des inhomogénéités de courant au niveau de la surface de ladite couche oscillante et l'intensité de courant fourni par lesdits moyens d'alimentation (31, 35) est choisie de sorte l'aimantation de ladite couche oscillante présente une configuration magnétique cohérente, ladite configuration magnétique oscillant dans son ensemble à une même fréquence fondamentale.
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