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1. WO2011119489 - PROCÉDÉ DIFFÉRENTIEL DE GRAVURE DE GRILLE MÉTALLIQUE

Numéro de publication WO/2011/119489
Date de publication 29.09.2011
N° de la demande internationale PCT/US2011/029210
Date du dépôt international 21.03.2011
CIB
C23F 1/00 2006.1
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
FENLÈVEMENT NON MÉCANIQUE DE MATÉRIAU MÉTALLIQUE DES SURFACES; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES; MOYENS POUR EMPÊCHER L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL; PROCÉDÉS À ÉTAPES MULTIPLES POUR LE TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES UTILISANT AU MOINS UN PROCÉDÉ COUVERT PAR LA CLASSE C23 ET AU MOINS UN PROCÉDÉ COUVERT SOIT PAR LA SOUS-CLASSE C21D, SOIT PAR LA SOUS-CLASSE C22F, SOIT PAR LA CLASSE C25308
1Décapage de matériaux métalliques par des moyens chimiques
CPC
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/32165
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32137controlling of the discharge by modulation of energy
32155Frequency modulation
32165Plural frequencies
H01J 37/3266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
3266Magnetic control means
H01L 21/32136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
H01L 21/823437
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823437with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
H01L 21/823456
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823437with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
823456gate conductors with different shapes, lengths or dimensions
Déposants
  • TOKYO ELECTRON LIMITED [JP]/[JP] (AllExceptUS)
  • LUONG, Vinh, Hoang [US]/[US] (UsOnly)
  • TAKAHASHI, Hiroyuki [JP]/[JP] (UsOnly)
  • KO, Akiteru [JP]/[US] (UsOnly)
  • YAMASHITA, Asao [JP]/[JP] (UsOnly)
  • BHARADWAJ, Vaidya (formerly Vaidyanathan Balasubramaniam) [US]/[US] (UsOnly)
  • ENOMOTO, Takashi [JP]/[JP] (UsOnly)
  • PRAGER, Daniel, J. [US]/[US] (UsOnly)
Inventeurs
  • LUONG, Vinh, Hoang
  • TAKAHASHI, Hiroyuki
  • KO, Akiteru
  • YAMASHITA, Asao
  • BHARADWAJ, Vaidya (formerly Vaidyanathan Balasubramaniam)
  • ENOMOTO, Takashi
  • PRAGER, Daniel, J.
Mandataires
  • STRANG, Eric
Données relatives à la priorité
12/729,53823.03.2010US
Langue de publication Anglais (en)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) DIFFERENTIAL METAL GATE ETCHING PROCESS
(FR) PROCÉDÉ DIFFÉRENTIEL DE GRAVURE DE GRILLE MÉTALLIQUE
Abrégé
(EN) A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.
(FR) La présente invention se rapporte à un procédé permettant de graver une structure de grille métallique différentielle sur un substrat. La structure de grille métallique différentielle comprend une couche de grille métallique recouvrant une couche diélectrique à constante diélectrique élevée (k élevé), la couche de grille métallique comprenant une épaisseur différente au niveau de différentes régions sur le substrat. La couche de grille métallique est décorée d'un motif à l'aide d'un procédé de gravure par plasma, au moins une étape de gravure comprenant la formation du plasma à l'aide d'un gaz contenant l'halogène et au moins une étape de gravure comprenant la formation du plasma à l'aide d'un gaz additif ayant le carbone (C), l'hydrogène (H) et le fluor (F) comme constituants atomiques.
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