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1. WO2011116013 - PISTE DE SUPPORT DE PLAQUETTES

Numéro de publication WO/2011/116013
Date de publication 22.09.2011
N° de la demande internationale PCT/US2011/028551
Date du dépôt international 15.03.2011
CIB
C23C 16/458 2006.1
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
CREVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES PAR DIFFUSION DANS LA SURFACE, PAR CONVERSION CHIMIQUE OU SUBSTITUTION; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL
16Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)
44caractérisé par le procédé de revêtement
458caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
CPC
C23C 16/4412
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
C23C 16/45519
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45519Inert gas curtains
C23C 16/45565
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45565Shower nozzles
C23C 16/4583
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
C23C 16/481
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
48by irradiation, e.g. photolysis, radiolysis, particle radiation
481by radiant heating of the substrate
C23C 16/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
54Apparatus specially adapted for continuous coating
Déposants
  • ALTA DEVICES, INC. [US]/[US] (AllExceptUS)
  • HE, Gang [US]/[US] (UsOnly)
  • HIGASHI, Gregg [US]/[US] (UsOnly)
  • SORABJI, Khurshed [US]/[US] (UsOnly)
  • HAMAMJY, Roger [US]/[US] (UsOnly)
  • HEGEDUS, Andreas, G. [US]/[US] (UsOnly)
Inventeurs
  • HE, Gang
  • HIGASHI, Gregg
  • SORABJI, Khurshed
  • HAMAMJY, Roger
  • HEGEDUS, Andreas, G.
Mandataires
  • SAWYER, Joseph, A., Jr.
Données relatives à la priorité
12/725,30816.03.2010US
Langue de publication Anglais (en)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) WAFER CARRIER TRACK
(FR) PISTE DE SUPPORT DE PLAQUETTES
Abrégé
(EN) Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may be independently contain quartz, and in some examples, may be fused together.
(FR) Certains modes de réalisation de l'invention concernent en général des appareils destinés à des processus de dépôt chimique en phase vapeur (CVD). Dans un mode de réalisation, une piste de support de plaquettes sert à faire léviter et traverser un support de plaquettes à l'intérieur d'un système de réacteur de dépôt chimique en phase vapeur et comprend des sections supérieure et inférieure d'un ensemble piste qui forment une cavité entre elles. Un chemin de guidage s'étend le long d'une surface supérieure de la section supérieure et entre deux surfaces latérales qui s'étendent parallèlement entre elles le long et au-dessus du chemin de guidage. Plusieurs orifices à gaz situés le long du chemin de guidage s'étendent de la surface supérieure de la section supérieure, et traversent la section supérieure pour déboucher dans la cavité à gaz. Dans certains exemples, les sections supérieure et inférieure de l'ensemble piste peuvent contenir indépendamment du quartz, et dans certains exemples, peuvent être fusionnées ensemble.
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