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1. WO2011111889 - PROCÉDÉ DE FABRICATION D'UN FILM MINCE CIGS

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Numéro de publication WO/2011/111889
Date de publication 15.09.2011
N° de la demande internationale PCT/KR2010/001544
Date du dépôt international 12.03.2010
CIB
H01L 31/042 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
042Modules PV ou matrices de cellules PV individuelles
CPC
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/305
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
305Sulfides, selenides, or tellurides
C23C 16/45531
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45527characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
45531specially adapted for making ternary or higher compositions
H01L 31/0322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
0322comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
Y02E 10/541
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
541CuInSe2 material PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Déposants
  • 주식회사 메카로닉스 MECHARONICS CO., LTD. [KR]/[KR] (AllExceptUS)
  • 장혁규 JANG, Hyuk Kyoo [KR]/[KR] (UsOnly)
  • 김현창 KIM, Hyun Chang [KR]/[KR] (UsOnly)
  • 이주영 LEE, Joo Young [KR]/[KR] (UsOnly)
Inventeurs
  • 장혁규 JANG, Hyuk Kyoo
  • 김현창 KIM, Hyun Chang
  • 이주영 LEE, Joo Young
Mandataires
  • 김인한 KIM, In Han
Données relatives à la priorité
Langue de publication Coréen (ko)
Langue de dépôt coréen (KO)
États désignés
Titre
(EN) METHOD FOR MANUFACTURING A CIGS THIN FILM
(FR) PROCÉDÉ DE FABRICATION D'UN FILM MINCE CIGS
(KO) CIGS 박막 제조방법
front page image
Abrégé
(EN) The present invention relates to a method for manufacturing a CIGS thin film using chemical vapor deposition or atomic layer deposition by simultaneously or sequentially feeding respective precursors into a chamber. More particularly, the present invention relates to a method for manufacturing a CIGS thin film using chemical vapor deposition by simultaneously feeding a copper (Cu) precursor, an indium (In) precursor, a gallium (Ga) precursor, and a selenium (Se) precursor onto a substrate mounted inside a vacuum chamber or by feeding a combination of at least two of the precursors, or relates to a method for manufacturing a CIGS thin film on a substrate by using atomic layer deposition, wherein the method includes the steps of: 1) positioning a substrate in a vacuum chamber and maintaining the substrate at a specific reaction temperature; 2) feeding a copper precursor into the vacuum chamber and allowing the copper precursor to react with the substrate; 3) performing a first purge for removing unreacted substances and by-products; 4) feeding an indium precursor into the vacuum chamber and allowing the indium precursor to react with the substrate; 5) performing a second purge for removing unreacted substances and by-products; 6) feeding a gallium precursor into the vacuum chamber and allowing the gallium precursor to react with the substrate; 7) performing a third purge for removing unreacted substances and by-products; 8) supplying a selenium precursor into the vacuum chamber and allowing the selenium precursor to react with the substrate; and 9) performing a fourth purge for removing unreacted substances and by-products. According to the present invention, a large area thin film can be provided with a short manufacturing time, high productivity, low manufacturing costs, and excellent film quality.
(FR) La présente invention concerne un procédé de fabrication d'un film mince CIGS qui utilise un dépôt chimique en phase vapeur ou un dépôt en couches atomiques en alimentant simultanément ou séquentiellement des précurseurs respectifs dans une chambre. Plus particulièrement, la présente invention concerne un procédé de fabrication d'un film mince CIGS utilisant un dépôt chimique en phase vapeur en alimentant simultanément un précurseur en cuivre (Cu), un précurseur en indium (In), un précurseur en gallium (Ga) et un précurseur en sélénium (Se) sur un substrat monté à l'intérieur d'une chambre à vide ou en alimentant une combinaison d'au moins deux des précurseurs ou concerne un procédé de fabrication d'un film mince CIGS sur un substrat en utilisant un dépôt en couches atomiques dans lequel le procédé comprend les étapes de : 1) positionnement d'un substrat dans une chambre à vide et maintien du substrat à une température de réaction spécifique ; 2) alimentation d'un précurseur en cuivre dans la chambre à vide et autorisation que le précurseur en cuivre réagisse avec le substrat ; 3) réalisation d'une première purge destinée à retirer les substances n'ayant pas réagi et les sous-produits ; 4) alimentation d'un précurseur en indium dans la chambre à vide et autorisation que le précurseur en indium réagisse avec le substrat ; 5) réalisation d'une deuxième purge destinée à retirer les substances n'ayant pas réagi et les sous-produits ; 6) alimentation d'un précurseur en gallium dans la chambre à vide et autorisation que le précurseur en gallium réagisse avec le substrat ; 7) réalisation d'une troisième purge destinée à retirer les substances n'ayant pas réagi et les sous-produits ; 8) fourniture d'un précurseur en sélénium dans la chambre à vide et autorisation que le précurseur en sélénium réagisse avec le substrat ; et 9) réalisation d'une quatrième purge destinée à retirer les substances n'ayant pas réagi et les sous-produits. Selon la présente invention, un film mince à grande surface peut être doté d'un temps de fabrication court, d'une productivité élevée, de coûts de fabrication faibles et d'une excellente qualité de film.
(KO) 본 발명은 각 전구체를 챔버 내부에 동시 공급 또는 순차 공급하면서 화학기상 증착법 또는 원자층 증착법을 이용하여 CIGS 박막을 제조하는 방법에 관한 것이다. 더욱 구체적으로는 진공 챔버 내에 장착된 기판상에 구리(Cu) 전구체, 인듐(In) 전구체, 갈륨(Ga) 전구체, 및 셀레늄(Se) 전구체를 동시에 또는 이들 중 2가지 이상의 조합으로 공급하면서 화학기상 증착법을 이용하여 박막을 제조하거나, 1) 진공 챔버 내부에 기판을 위치시키고, 상기 기판을 특정한 반응 온도로 유지하는 단계; 2) 진공 챔버 내부로 구리 전구체를 공급하고 반응시키는 단계; 3) 미반응 물질 및 부산물을 제거하는 제1 퍼징 단계; 4) 진공 챔버 내부로 인듐 전구체를 공급하고 반응시키는 단계; 5) 미반응 물질 및 부산물을 제거하는 제2 퍼징 단계; 6) 진공 챔버 내부로 갈륨 전구체를 공급하고 반응시키는 단계; 7) 미반응 물질 및 부산물을 제거하는 제3 퍼징 단계; 8) 진공 챔버 내부로 셀레늄 전구체를 공급하고 반응시키는 단계; 및 9) 미반응 물질 및 부산물을 제거하는 제4 퍼징 단계;를 포함하고, 원자층 증착법을 이용하여 기판상에 박막을 제조하는 것을 특징으로 하는 CIGS 박막 제조방법에 관한 것이다. 본 발명에 의하면 제조시간이 짧고, 생산성이 높으며, 제조단가가 낮고, 막질이 우수한 대면적 박막을 제공할 수 있다.
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