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1. WO2011105283 - CELLULE SPHÉRIQUE À SEMI-CONDUCTEUR COMPOSÉ, MODULE DE CELLULES SOLAIRES, ET PROCÉDÉS DE FABRICATION DE LA CELLULE SPHÉRIQUE À SEMI-CONDUCTEUR COMPOSÉ ET DU MODULE DE CELLULES SOLAIRES

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Numéro de publication WO/2011/105283
Date de publication 01.09.2011
N° de la demande internationale PCT/JP2011/053407
Date du dépôt international 17.02.2011
CIB
H01L 31/04 2006.1
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/03529
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
03529Shape of the potential jump barrier or surface barrier
H01L 31/03923
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03923including AIBIIICVI compound materials, e.g. CIS, CIGS
H01L 31/046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H01L 31/0465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
0465comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/0749
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0749including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
Déposants
  • 株式会社日立製作所 HITACHI, LTD. [JP]/[JP] (AllExceptUS)
  • 内藤　寛人 NAITO Hiroto [JP]/[JP] (UsOnly)
  • 吉本　尚起 YOSHIMOTO Naoki [JP]/[JP] (UsOnly)
Inventeurs
  • 内藤　寛人 NAITO Hiroto
  • 吉本　尚起 YOSHIMOTO Naoki
Mandataires
  • 磯野　道造 ISONO Michizo
Données relatives à la priorité
2010-04124326.02.2010JP
Langue de publication Japonais (ja)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) SPHERICAL COMPOUND SEMICONDUCTOR CELL, SOLAR CELL MODULE, AND METHODS FOR MANUFACTURING THE SPHERICAL COMPOUND SEMICONDUCTOR CELL AND THE SOLAR CELL MODULE
(FR) CELLULE SPHÉRIQUE À SEMI-CONDUCTEUR COMPOSÉ, MODULE DE CELLULES SOLAIRES, ET PROCÉDÉS DE FABRICATION DE LA CELLULE SPHÉRIQUE À SEMI-CONDUCTEUR COMPOSÉ ET DU MODULE DE CELLULES SOLAIRES
(JA) 球状化合物半導体セル、太陽電池モジュール、及び、それらの製造方法
front page image
Abrégé
(EN) Disclosed is a spherical compound semiconductor cell wherein a compound semiconductor film that can suppress recombination and a leak current is sued. The spherical compound semiconductor cell is provided with: a spherical electrode (1), having at least the surface thereof formed of a conductor; a compound semiconductor layer (2), which is formed on the surface of the spherical electrode (1), and which has a chalcopyrite structure; buffer layers (3, 4) formed on the surface of the compound semiconductor layer (2); and a transparent electrode layer (5) formed on the surfaces of the buffer layers (3, 4). In the spherical compound semiconductor cell, recombination and a leak current are suppressed, and photoelectric conversion efficiency is increased by having the cell structure provided with the buffer layers (3, 4).
(FR) L'invention concerne une cellule sphérique à semi-conducteur composé dans laquelle un film de semi-conducteur composé qui peut supprimer la recombinaison et le courant de fuite est déposé. Cette cellule comporte : une électrode sphérique (1), dont au moins la surface est constituée d'un conducteur ; une couche de semi-conducteur composé (2), qui est formée sur la surface de l'électrode sphérique (1), et qui a une structure chalcopyrite ; des couches tampons (3, 4) formées sur la surface de la couche de semi-conducteur composé (2) ; et une couche d'électrode transparente (5) formée sur les surfaces des couches tampons (3, 4). La cellule sphérique à semi-conducteur composé présente une efficacité de conversion photoélectrique augmentée grâce aux couches tampons (3, 4).
(JA) 　本発明は、再結合及びリーク漏れ電流を抑制できる化合物半導体膜を用いた球状の化合物半導体セルを提供することを目的とする。本発明の球状化合物半導体セルは、少なくとも表面が導電体である球状電極１と、球状電極１の表面に形成されたカルコパイライト構造の化合物半導体層２と、化合物半導体層２の表面に形成された緩衝層３，４と、緩衝層３，４の表面に形成された透明電極層５を具備することを特徴とする。緩衝層３，４を具備したセル構造とすることで、再結合またはリーク漏れ電流を抑制し光電変換効率が増加する球状化合物半導体セルとすることができる。
Documents de brevet associés
JP2011181534
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