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1. WO2011042329 - JEU DE MASQUES DE PHOTOLITHOGRAPHIE ET PROCEDE DE MASQUAGE

Numéro de publication WO/2011/042329
Date de publication 14.04.2011
N° de la demande internationale PCT/EP2010/064271
Date du dépôt international 27.09.2010
CIB
G03F 7/20 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
G03F 1/22
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
G03F 1/64
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
64characterised by the frames, e.g. structure or material, including bonding means therefor
G03F 1/70
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20 - G03F1/50
70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
G03F 7/70283
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70283Masks or their effects on the imaging process, e.g. Fourier masks, greyscale masks, holographic masks, phase shift masks, phasemasks, lenticular masks, multiple masks, tilted masks, tandem masks
Déposants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR] (AllExceptUS)
  • IMBERT, Jean-Louis [FR]/[FR] (UsOnly)
  • CONSTANCIAS, Christophe [FR]/[FR] (UsOnly)
Inventeurs
  • IMBERT, Jean-Louis
  • CONSTANCIAS, Christophe
Mandataires
  • GUERIN, Michel
Données relatives à la priorité
090484809.10.2009FR
Langue de publication français (FR)
Langue de dépôt français (FR)
États désignés
Titre
(EN) PHOTOLITHOGRAPHY MASK SET AND MASKING METHOD
(FR) JEU DE MASQUES DE PHOTOLITHOGRAPHIE ET PROCEDE DE MASQUAGE
Abrégé
(EN)
The invention relates to extreme-ultraviolet photolithography masks. The mask according to the invention operates in a transmission mode, and comprises a rigid frame (10) preferably made of silicon and having a plurality of openings (121-124) formed therein and each covered with a very thin silicon membrane having a thickness of 300 nanometer at most. The silicon membrane comprises a masking layer etched according to a desired pattern. The exposure of a photosensitive layer is carried out sequentially through three or four masks having complementary openings for exposing the entire photosensitive surface, including at locations where said photosensitive surface is masked by the silicon frame of one or the other mask.
(FR)
L'invention concerne les masque de photolithographie en extrême ultraviolet. Le masque selon l'invention fonctionne en transmission et il comporte un cadre rigide (10), de préférence en silicium, percé de plusieurs ouvertures (121 à 124), recouvertes chacune d'une membrane très mince en silicium d'une épaisseur de 300 nanomètres au maximum. La membrane de silicium porte une couche de masquage gravée selon un motif désiré. L'exposition d'une couche photosensible se fait successivement à travers trois ou quatre masques dont les ouvertures se complètent pour exposer toute la surface photosensible, y compris là où elle est masquée par le cadre de silicium de l'un ou l'autre masque.
Également publié en tant que
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