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1. WO2008097339 - TRANSISTOR DE DÉVIATION EN RÉGIME BALISTIQUE ET CIRCUITS LOGIQUES À BASE DE CE TRANSISTOR

Numéro de publication WO/2008/097339
Date de publication 14.08.2008
N° de la demande internationale PCT/US2007/074254
Date du dépôt international 24.07.2007
CIB
H01L 29/06 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
02Corps semi-conducteurs
06caractérisés par leur forme; caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 27/0605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0605integrated circuits made of compound material, e.g. AIIIBV
H01L 29/125
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
122Single quantum well structures
125Quantum wire structures
H01L 29/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds ; , e.g. alloys
205in different semiconductor regions ; , e.g. heterojunctions
H01L 29/66977
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66977Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
H01L 29/7784
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7782with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
7783using III-V semiconductor material
7784with delta or planar doped donor layer
Déposants
  • UNIVERSITY OF ROCHESTER [US]/[US] (AllExceptUS)
  • DIDUCK, Quentin [US]/[US] (UsOnly)
  • MARGALA, Martin [CA]/[US] (UsOnly)
Inventeurs
  • DIDUCK, Quentin
  • MARGALA, Martin
Mandataires
  • GREENBAUM, Michael, C.
Données relatives à la priorité
60/832,59724.07.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) BALLISTIC DEFLECTION TRANSISTOR AND LOGIC CIRCUITS BASED ON SAME
(FR) TRANSISTOR DE DÉVIATION EN RÉGIME BALISTIQUE ET CIRCUITS LOGIQUES À BASE DE CE TRANSISTOR
Abrégé
(EN)
A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.
(FR)
Une structure à puits quantique est formée dans un substrat pour définir un concentrateur, des ports partant du concentrateur, et une structure déflectrice dans le concentrateur. Les électrons traversent le concentrateur et les ports selon l'effet à électrons balistiques. Des portes contrôlent le mouvement des électrons, les faisant arriver en incidence sur un côté ou l'autre de la structure déflectrice, contrôlant ainsi la direction dans laquelle ils sont déviés et le port par lequel ils passent.
Également publié en tant que
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