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1. (WO2008060601) DIODES ÉLECTROLUMINESCENTES À HAUTE EFFICACITÉ, BLANCHES, MONOCHROMATIQUES OU POLYCHROMATIQUES (DEL) PAR DES STRUCTURES D'ADAPTATION D'INDICE
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

WHAT IS CLAIMED IS:
1. An optoelectronic device, comprising:
(a) a substrate;
(b) an ensemble comprised of insulating and semiconducting materials formed on the substrate and including one or more Ill-nitride active layers for emitting light; and
(c) an overstructure, formed over the ensemble, for suppressing guided modes within the ensemble by having an index of refraction at least matching an index of refraction of the ensemble, wherein the overstructure acts as a light extractor for the emitted light.

2. The device of claim 1, wherein the overstructure has an index of refraction higher than the index of refraction of the ensemble.

3. The device of claim 1, wherein the overstructure is comprised of high and low index of refraction materials.

4. The device of claim 1, wherein the overstructure includes
inhomogeneities for scattering the emitted light out of the overstructure.

5. The device of claim 4, wherein the inhomogeneities are achieved by shaping the overstructure, by incorporating materials having a variable index of refraction into the overstructure, by incorporating holes into the overstructure, or by structuring a surface of the overstructure.

6. The device of claim 1, wherein the overstructure incorporates optically active material, resulting a second active region that is optically pumped by the emitted light originating in the ensemble.

7. The device of claim 1 , wherein a top surface of the overstructure is roughened, textured, patterned, or formed into a shape to enhance extraction of the emitted light.

8. The device of claim 1, further comprising a mirror positioned in proximity to the ensemble for reflecting the emitted light within the device towards the overstructure, so that the emitted light interacts with light extracting features of the overstructure.

9. The device of claim 8, wherein the mirror is formed on a surface of the substrate.

10. The device of claim 8, wherein the substrate has been removed and the mirror is placed on an exposed surface of the ensemble.

11. The device of claim 1 , wherein the optoelectronic device is positioned within a high index of refraction material to extract the emitted light.

12. The device of claim 1 , further comprising one or more transparent contacts deposited on a surface of the device.

13. An optoelectronic device, comprising:
(a) one or more Ill-nitride active layers for emitting light; and
(b) an overstructure, formed over the layers, that suppresses light trapped within the Ill-nitride active layers by using, as an escape facilitator, a material with an index of refraction at least matching an index of refraction of the Ill-nitride active layers, in order to extract the emitted light from the device.

14. A method of fabricating an optoelectronic device, comprising: (a) providing a substrate;
(b) forming an ensemble comprised of insulating and semiconducting materials on the substrate and including one or more Ill-nitride active layers for emitting light; and
(c) forming an overstructure, over the ensemble, for suppressing guided modes within the ensemble by having an index of refraction at least matching an index of refraction of the ensemble, wherein the overstructure acts as a light extractor for the emitted light.

15. A method of fabricating an optoelectronic device, comprising:
(a) creating one or more Ill-nitride active layers for emitting light; and
(b) creating an overstructure, over the Ill-nitride active layers, that suppresses light trapped within the Ill-nitride active layers by using, as an escape facilitator, a material with an index of refraction at least matching an index of refraction of the III-nitride active layers, in order to extract the emitted light from the device.